Green
DMT10H010LCT
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary Features
I Low Input Capacitance
D
BV R Package
DSS DS(ON)
T = +25C
C
High BV Rating for Power Application
DSS
100V TO220AB 98A
9.5m @V = 10V
GS
Low Input/Output Leakage
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. Green Device (Note 3)
Description
Qualified to AEC-Q101 Standards for High Reliability
This new generation MOSFET features low on-resistance and fast
switching, making it ideal for high-efficiency power management
applications.
Applications Mechanical Data
Motor Control
Case: TO220AB
Backlighting
Case Material: Molded Plastic, Green Molding Compound. UL
DC-DC Converters
Flammability Classification Rating 94V-0
Power Management Functions
Terminals: Matte Tin Finish Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram Below
Weight: TO220AB 1.85 grams (Approximate)
TO220AB
Top View
Top View Bottom View Pin Out Configuration
Equivalent Circuit
Ordering Information (Note 4)
Part Number Case Packaging
DMT10H010LCT TO220AB 50 Pieces/Tube
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See
DMT10H010LCT
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage 100 V
V
DSS
Gate-Source Voltage 20 V
V
GSS
T = +25C 98
C
Continuous Drain Current I A
D
62
T = +100C
C
90
Maximum Continuous Body Diode Forward Current T = +25C I A
C S
92
Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I A
DM
Avalanche Current, L=0.3mH (Note 7) 10 A
I
AS
Avalanche Energy, L=0.3mH (Note 7) 15 mJ
E
AS
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation (Note 5) W
T = +25C P
A D
Thermal Resistance, Junction to Ambient (Note 5) R C/W
JA
Total Power Dissipation T = +25C P W
C D
Thermal Resistance, Junction to Case R C/W
JC
Operating and Storage Temperature Range T T -55 to +150 C
J, STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage BV 100 V V = 0V, I = 1mA
DSS GS D
Zero Gate Voltage Drain Current 1 A
I V = 80V, V = 0V
DSS DS GS
Gate-Source Leakage 100 nA
I V = 20V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage 1.4 1.9 3.0 V
V V = V , I = 250 A
GS(TH) DS GS D
6.9 9.5
V = 10V, I = 13A
GS D
Static Drain-Source On-Resistance 8 12 m
R V = 6V, I = 13A
DS(ON) GS D
10 20 V = 4.5V, I = 5A
GS D
Diode Forward Voltage V 1.3 V V = 0V, I = 13A
SD GS S
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance C 2592
iss
V = 50V, V = 0V
DS GS
792
Output Capacitance C pF
oss
f = 1MHz
45
Reverse Transfer Capacitance C
rss
2
Gate Resistance
R V = 0V, V = 0V, f = 1MHz
G DS GS
Total Gate Charge 53.7
Q
G
V = 50V, I = 13A,
DD D
Gate-Source Charge 10.6 nC
Q
GS
V = 10V
GS
Gate-Drain Charge 8.2
Q
GD
Turn-On Delay Time 11.6
t
D(ON)
14.1
Turn-On Rise Time t V = 50V, V = 10V,
R DD GS
ns
42.9
Turn-Off Delay Time t I = 13A, R = 6
D(OFF) D G
22
Turn-Off Fall Time t
F
49.8
Reverse Recovery Time t ns
RR
I = 13A, di/dt = 100A/s
F
85.1
Reverse Recovery Charge Q nC
RR
Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
2 of 7
March 2016
DMT10H010LCT
www.diodes.com Diodes Incorporated
Document number: DS37976 Rev. 4 - 2