Green DMT10H010LPS 100V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features I Max Thermally Efficient Package-Cooler Running Applications D BV R Max DSS DS(ON) T = +25C C High Conversion Efficiency Low R Minimizes On-State Losses DS(ON) 100V 98A 8.3m VGS = 10V Low Input Capacitance Fast Switching Speed <1.1mm Package Profile Ideal for Thin Applications (PowerDI ) Description Lead-Free Finish RoHS Compliant (Notes 1 & 2) This new generation N-Channel Enhancement Mode MOSFET is Halogen and Antimony Free. Green Device (Note 3) designed to minimize R , yet maintain superior switching DS(ON) Qualified to AEC-Q101 Standards for High Reliability performance. This device is ideal for use in notebook battery power management and load switch. Mechanical Data Applications Case: PowerDI5060-8 Motor Control Case Material: Molded Plastic, Green Molding Compound. DC-DC Converters UL Flammability Classification Rating 94V-0 Power Management Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Below Terminal Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.097 grams (Approximate) PowerDI5060-8 D S D Pin1 S D S D G D G S Top View Pin Configuration Top View Bottom View Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMT10H010LPS-13 PowerDI5060-8 2,500 / Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 2. See DMT10H010LPS Marking Information D D D D = Manufacturers Marking T1010SS = Product Type Marking Code YYWW = Date Code Marking T1010SS YY = Last Two Digits of Year (ex: 18 = 2018) WW = Week Code (01 to 53) YY WW S S S G Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 100 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C 9.4 A I A D State 7.5 T = +70C A Continuous Drain Current V = 10V GS Steady T = +25C 98 C A I D State 62 T = +100C C 250 Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I A DM 110 Maximum Continuous Body Diode Forward Current I A S 250 Pulsed Body Diode Current (10s Pulse, Duty Cycle = 1%) I A SM 10 Avalanche Current (Note 7), L=3mH I A AS Avalanche Energy (Note 7), L=3mH 150 mJ E AS t=10s V 110 V V Spike, L=0.1mH SPIKE DS Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) P 1.2 W D Steady State 99 Thermal Resistance, Junction to Ambient (Note 5) R C/W JA 139 Total Power Dissipation T = +25C P W C D 0.9 Thermal Resistance, Junction to Case R C/W JC Operating and Storage Temperature Range -55 to +150 C T T J, STG 2 of 8 DMT10H010LPS February 2018 Diodes Incorporated www.diodes.com Document number: DS37977 Rev.8 - 2