DMT10H015LCG 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I Max 100% Unclamped Inductive Switch (UIS) Test in Production D BV R Max DSS DS(ON) T = +25C C High Conversion Efficiency Low R Minimizes On State Losses DS(ON) 34A 15m VGS = 10V Low Input Capacitance 100V Fast Switching Speed 19.5m V = 6V 32A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description and Applications This new generation N-Channel Enhancement Mode MOSFET is Mechanical Data designed to minimize R and yet maintain superior switching DS(ON) Case: V-DFN3333-8 (Type B) performance. This device is ideal for use in Notebook battery power management and Load switch. Case Material: Molded Plastic,Gree Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Backlighting Power Management Functions Terminal Connections Indicator: See Below Diagram Terminals: Finish NiPdAu over Copper Leadframe. DC-DC Converters e4 Solderable per MIL-STD-202, Method 208 Weight: 0.03 grams (Approximate) Pin 1 D S S S G G D D D D S Top View Top View Bottom View Internal Schematic Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging DMT10H015LCG-7 V-DFN3333-8 (Type B) 2,000/Tape & Reel DMT10H015LCG-13 V-DFN3333-8 (Type B) 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DMT10H015LCG Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 100 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C 9.4 A Continuous Drain Current, V = 10V (Note 6) I A GS D State 7.5 T = +70C A Steady T = +25C 34 C Continuous Drain Current, V = 10V I A GS D State 21 T = +100C C Maximum Continuous Body Diode Forward Current (Note 6) 1.6 A I S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 54 A DM Avalanche Current, L = 3mH (Note 8) I 7.5 A AS Avalanche Energy, L = 3mH (Note 8) E 85 mJ AS Thermal Characteristics ( TA = +25C, unless otherwise specified.) Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 1 W P D 118 Thermal Resistance, Junction to Ambient (Note 5) R C/W JA 2.1 Total Power Dissipation (Note 6) P W D 59 Thermal Resistance, Junction to Ambient (Note 6) C/W R JA 4.5 Thermal Resistance, Junction to Case C/W R JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 100 V V = 0V, I = 1mA DSS GS D Zero Gate Voltage Drain Current I 1 A V = 80V, V = 0V DSS DS GS Gate-Source Leakage 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage 1.4 2 3.5 V V V = V , I = 250A GS(TH) DS GS D 12.1 15 V = 10V, I = 20A GS D m Static Drain-Source On-Resistance 15 19.5 R V = 6V, I = 20A DS(ON) GS D 18.9 26 m V = 4.5V, I = 5A GS D Diode Forward Voltage V 0.9 1.3 V SD V = 0V, I = 20A GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 1871 C iss V = 50V, V = 0V DS GS 261 Output Capacitance C pF oss f = 1MHz 6.9 Reverse Transfer Capacitance C rss 0.75 Gate Resistance R V = 0V, V = 0V, f = 1MHz g DS GS 33.3 Total Gate Charge Q g V = 50V, I = 10A, DD D 6.9 Gate-Source Charge nC Q gs V = 10V GS Gate-Drain Charge 5.1 Q gd Turn-On Delay Time 6.5 t D(ON) Turn-On Rise Time 7 t V = 50V, V = 10V, R DD GS ns Turn-Off Delay Time 19.7 t I = 10A, R = 6 D(OFF) D g 8.1 Turn-Off Fall Time t F 37.9 Reverse Recovery Time t ns RR I = 10A, di/dt = 100A/s F 51.9 Reverse Recovery Charge Q nC RR Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 7 DMT10H015LCG July 2018 Diodes Incorporated www.diodes.com Document number: DS38362 Rev. 4 - 2