DMT10H015LSS 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I 100% Unclamped Inductive Switch (UIS) Test in Production D BV R Max DSS DS(ON) T = +25C A High Conversion Efficiency Low R Minimizes On-State Losses DS(ON) 8.3A 16m VGS = 10V 100V Low Input Capacitance 18m V = 6V 7.9A GS Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Description and Applications Case: SO-8 This new generation N-Channel Enhancement Mode MOSFET is designed to minimize R , yet maintain superior switching DS(ON) Case Material: Molded Plastic,Gree Molding Compound. performance. This device is ideal for use in notebook battery power UL Flammability Classification Rating 94V-0 management and loadswitch. Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Backlighting Terminals: Finish Matte Tin Annealed over Copper Leadframe. Power Management Functions Solderable per MIL-STD-202, Method 208 DC-DC Converters Weight: 0.074 grams (Approximate) D S D SO-8 S D S D G G D S Top View Equivalent Circuit Top View Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMT10H015LSS-13 SO-8 2,500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMT10H015LSS Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage 100 V V DSS Gate-Source Voltage 20 V V GSS Steady T = +25C 8.3 A A Continuous Drain Current (Note 6) V = 10V I GS D State 6.7 T = +70C A Maximum Continuous Body Diode Forward Current (Note 6) I 3 A S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 54 A DM Avalanche Current (Note 8) L = 3mH I 7.5 A AS Avalanche Energy (Note 8) L = 3mH 85 mJ E AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Total Power Dissipation (Note 5) P 1.2 W D Thermal Resistance, Junction to Ambient (Note 5) R 100 C/W JA Total Power Dissipation (Note 6) 1.67 W P D Thermal Resistance, Junction to Ambient (Note 6) 75 C/W R JA Thermal Resistance, Junction to Case (Note 6) 12 C/W R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics (TA = +25C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 100 V V = 0V, I = 1mA DSS GS D Zero Gate Voltage Drain Current I 1 A V = 80V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 1.4 2.3 3 V V = V , I = 250A GS(TH) DS GS D 12 16 VGS = 10V, ID = 20A Static Drain-Source On-Resistance 14.5 18 m R V = 6V, I = 20A DS(ON) GS D 17 25 V = 4.5V, I = 5A GS D Diode Forward Voltage 0.9 1.3 V V V = 0V, I = 20A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 1,871 C ISS V = 50V, V = 0V DS GS 261 Output Capacitance C pF OSS f = 1MHz 7 Reverse Transfer Capacitance C RSS 0.75 Gate Resistance R V = 0V, V = 0V, f = 1MHz G DS GS 33.3 Total Gate Charge Q G V = 50V, I = 10A, DD D 6.9 Gate-Source Charge Q nC GS V = 10V GS 5.1 Gate-Drain Charge QGD Turn-On Delay Time 6.5 t D(ON) Turn-On Rise Time 7 t V = 50V, V = 10V, R DD GS ns Turn-Off Delay Time 19.7 t ID = 10A, RG = 6 D(OFF) Turn-Off Fall Time 8.1 t F 37.9 Reverse Recovery Time t ns RR I = 10A, di/dt = 100A/s F 51.9 Reverse Recovery Charge Q nC RR Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 7 DMT10H015LSS June 2016 Diodes Incorporated www.diodes.com Document number: DS38046 Rev. 4 - 2 NEW PRODUCT ADVANCE INFORMATION ADVANCED INFORMATION