DMT10H017LPD Green PD DUAL N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features and Benefits 100% Unclamped Inductive SwitchingEnsures More Reliable I Max D BV R Max DSS DS(ON) and Robust End Application T = +25C C High-Conversion Efficiency 17.4m V = 10V 54.7A GS Low R Minimizes On State Losses DS(ON) 100V 30.3m V = 4.5V 41.4A Low-Input Capacitance GS Fast Switching Speed Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) For automotive applications requiring specific change control (i.e. parts qualified to AEC- Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. DMT10H017LPD PD Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 100 V DSS Gate-Source Voltage V 20 V GSS T = +25C 54.7 C A Continuous Drain Current, V = 10V (Note 6) I GS D 43.7 T = +70C C Maximum Body Diode Forward Current (Note 6) 60 A I S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 60 A I DM Avalanche Current, L = 3mH (Note 8) 10 A I AS Avalanche Energy, L = 3mH (Note 8) E 150 mJ AS Avalanche Current, L = 1mH I 10 A AS Avalanche Energy, L = 1mH E 50 mJ AS Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation 2.2 W T = +25C P A D Thermal Resistance, Junction to Ambient (Note 5) 56 C/W R JA Total Power Dissipation T = +25C P 78 W C D Thermal Resistance, Junction to Case (Note 6) R 1.6 C/W JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) C Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 100 V V = 0V, I = 1mA DSS GS D Zero Gate Voltage Drain Current I 1 A V = 80V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 16V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 1 3 V V = V , I = 250A GS(TH) DS GS D 13.7 17.4 V = 10V, I = 17A GS D Static Drain-Source On-Resistance R m DS(ON) 23.5 30.3 V = 4.5V, I = 10A GS D Diode Forward Voltage 0.8 1.3 V VSD VGS = 0V, IS = 17A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 1986 C iss V = 50V, V = 0V, DS GS Output Capacitance 333 pF C oss f = 1MHz Reverse Transfer Capacitance 20 C rss Gate Resistance 1.17 R V = 0V, V = 0V, f = 1MHz G DS GS 14.4 Total Gate Charge (V = 4.5V) Q GS g Total Gate Charge (V = 10V) Q 28.6 GS g nC V = 50V, I = 20A DS D Gate-Source Charge Q 5.2 gs Gate-Drain Charge Q 8.2 gd Turn-On Delay Time 9.8 t D(ON) Turn-On Rise Time 16.3 t V = 50V, V = 10V, R DD GS ns Turn-Off Delay Time 32.6 R = 11, I = 20A t G D D(OFF) Turn-Off Fall Time 21.6 t F Body Diode Reverse Recovery Time 40.6 ns t I = 17A, di/dt = 100A/s RR F Body Diode Reverse Recovery Charge 58.1 nC Q I = 17A, di/dt = 100A/s RR F Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 6. Thermal resistance from junction to solder point (on the exposed drain pin). 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 7 DMT10H017LPD October 2019 Diodes Incorporated www.diodes.com Document number: DS39828 Rev. 5 - 2