DMT10H025SSS 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I Max 100% Unclamped Inductive Switching Ensures More Reliable D BV R Max DSS DS(ON) TA = +25C and Robust End Application High Conversion Efficiency 23m VGS = 10V 7.4A 100V Low R Minimizes On-State Losses DS(ON) 30m VGS = 6V 6.5A Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description and Applications For automotive applications requiring specific change control This MOSFET is designed to minimize the on-state resistance (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and (R ), yet maintain superior switching performance, making it ideal manufactured in IATF 16949 certified facilities), please DS(ON) for high efficiency power management applications. contact us or your local Diodes representative. DMT10H025SSS Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 100 V DSS Gate-Source Voltage V 20 V GSS T = +25C A 7.4 A Continuous Drain Current (Note 6) VGS = 10V ID 5.9 TA = +70C Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 45 A IDM Maximum Continuous Body Diode Forward Current (Note 6) 3.2 A IS Pulsed Body Diode Forward Current (10s Pulse, Duty Cycle = 1%) I 45 A SM 25 Avalanche Current, L = 0.1mH I A AS 31.25 Avalanche Energy, L = 0.1mH E mJ AS Thermal Characteristics ( TA = +25C, unless otherwise specified.) Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 1.4 W TA = +25C PD Thermal Resistance, Junction to Ambient (Note 5) 91 C/W RJA Total Power Dissipation (Note 6) 1.9 W TA = +25C PD Thermal Resistance, Junction to Ambient (Note 6) 65 C/W RJA Total Power Dissipation (Note 6) 12.9 W TC = +25C PD Thermal Resistance, Junction to Case (Note 6) 8.5 C/W RJC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics (TA = +25C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 100 V BVDSS VGS = 0V, ID = 1mA Zero Gate Voltage Drain Current 1 A IDSS VDS = 80V, VGS = 0V Gate-Source Leakage 100 nA IGSS VGS = 20V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 2 4 V V = V , I = 250A GS(TH) DS GS D 17 23 V = 10V, I = 20A GS D Static Drain-Source On-Resistance R m DS(ON) 22 30 V = 6V, I = 12.5A GS D Diode Forward Voltage V 0.9 1.2 V V = 0V, I = 20A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 1544 Ciss Output Capacitance 250 pF Coss VDS = 50V, VGS = 0V, f = 1MHz Reverse Transfer Capacitance 20.4 Crss Gate Resistance 1.26 Rg VDS = 0V, VGS = 0V, f = 1MHz 21.4 Total Gate Charge (VGS = 10V) Qg Total Gate Charge (VGS = 6V) Qg 13.4 nC VDD = 50V, ID = 20A Gate-Source Charge Q 4.6 gs Gate-Drain Charge Q 6.0 gd Turn-On Delay Time t 8.2 D(ON) Turn-On Rise Time t 11.2 R VDD = 50V, VGS = 10V, ns Turn-Off Delay Time 27.5 I = 20A, R = 11 tD(OFF) D g Turn-Off Fall Time 13.7 tF Body Diode Reverse Recovery Time ns tRR 37.5 IF = 20A, di/dt = 100A/s Body Diode Reverse Recovery Charge nC QRR 50.9 Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 7 DMT10H025SSS December 2019 Diodes Incorporated www.diodes.com Document number: DS40133 Rev. 3 - 2