DMT10H072LFDFQ 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 0.6mm Profile Ideal for Low Profile Applications I Max D BV R Max DSS DS(ON) 2 PCB Footprint of 4mm T = +25C A Low On-Resistance 62m V = 10V 4A GS 100V 100% Unclamped Inductive Switching (UIS) Test in Production 80m V = 6V GS 3.5A Ensures More Reliable and Robust End Application Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Description Halogen and Antimony Free. Green Device (Note 3) The DMT10H072LFDFQ is suitable for automotive This MOSFET is designed to meet the stringent requirements of applications requiring specific change control and is AEC- automotive applications. It is qualified to AEC-Q101, supported by a Q101 qualified, is PPAP capable, and is manufactured in PPAP and is ideal for use in: IATF16949:2016 certified facilities. Power Management Functions Battery Operated Systems and Solid-State Relays Mechanical Data Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Case: U-DFN2020-6 Memories, Transistors, etc. Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e4 Weight: 0.0065 grams (Approximate) U-DFN2020-6 (Type F) D G Pin1 S Pin Out Top View Bottom View Bottom View Equivalent Circuit Ordering Information (Note 4) Part Number Case Quantity per Reel DMT10H072LFDFQ-7 U-DFN2020-6 (Type F) 3,000 DMT10H072LFDFQ-13 U-DFN2020-6 (Type F) 10,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DMT10H072LFDFQ Marking Information U-DFN2020-6 (Type F) 72 = Product Type Marking Code 72 YM = Date Code Marking Y = Year (ex: G = 2019) M = Month (ex: 9 = September) Date Code Key Year 2019 2020 2021 2022 2023 2024 2025 2026 2027 Code G H I J K L M N O Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D U-DFN2020-6 (Type F) 72 = Product Type Marking Code YWX = Date Code Marking 72 Y = Year (ex: 9 = 2019) W = Week (ex: a = week27 z represents week 52 and 53) X = Internal Code (ex: U = Monday) Date Code Key Year 2019 2020 2021 2022 2023 2024 2025 2026 2027 Code 9 0 1 2 3 4 5 6 7 Week 1-26 27-52 53 Code A-Z a-z z Internal Code Sun Mon Tue Wed Thu Fri Sat Code T U V W X Y Z Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage 100 V V DSS Gate-Source Voltage 20 V V GSS 4 T = +25C A Continuous Drain Current, V = 10V (Note 7) I A GS D 3.2 T = +70C A Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 22 A I DM 1.6 Maximum Body Diode Continuous Current I A S 6 Avalanche Current, L=0.1mH (Note 5) I A AS 1.8 Avalanche Energy, L=0.1mH (Note 5) E mJ AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit 0.8 T = +25C A Total Power Dissipation (Note 6) P W D 0.5 T = +70C A 149 Thermal Resistance, Junction to Ambient (Note 6) C/W R JA 1.8 T = +25C A Total Power Dissipation (Note 7) P W D 1.1 T = +70C A Thermal Resistance, Junction to Ambient (Note 7) 71 R JA C/W Thermal Resistance, Junction to Case (Note 7) 13 R JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Notes: 5. I and E ratings are based on low frequency and duty cycles to keep T = +25C. AS AS J 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 2 of 8 August 2019 DMT10H072LFDFQ www.diodes.com Diodes Incorporated Datasheet number: DS40084 Rev. 4 - 2 YWX Y M