DMT10H072LFV 100V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 Product Summary Features and Benefits Low R Ensures On State Losses are Minimized DS(ON) I Max D BV R Max DSS DS(ON) Small Form Factor Thermally Efficient Package Enables Higher T = +25C C Density End Products Occupies just 33% of the Board Area Occupied by SO-8 62m V = 10V 20A GS Enabling Smaller End Product 100V Low On-Resistance 77m V = 6V 16A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description This new generation MOSFET is designed to minimize the on-state Mechanical Data resistance (R ) and yet maintain superior switching performance, DS(ON) Case: PowerDI 3333-8 making it ideal for high-efficiency power management applications. Case Material: Molded Plastic,Gree Molding Compound. UL Flammability Classification Rating 94V-0 Applications Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Power Management Functions Terminals: Finish Matte Tin Annealed over Copper Battery Operated Systems and Solid-State Relays Leadframe. Solderable per MIL-STD-202, Method 208 Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Weight: 0.072 grams (Approximate) Memories, Transistors, etc. Pin1 PowerDI3333-8 (Type UX) S D S S G G D D D D S Equivalent Circuit Bottom View Top View Ordering Information (Note 4) Part Number Case Quantity per Reel DMT10H072LFV-7 PowerDI3333-8 (Type UX) 2,000/Tape & Reel DMT10H072LFV-13 PowerDI3333-8 (Type UX) 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DMT10H072LFV Maximum Ratings ( T = +25C unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 100 V DSS Gate-Source Voltage V 20 V GSS T = +25C 4.7 A Continuous Drain Current, V = 10V (Note 5) I A GS D 3.7 T = +70C A T = +25C 20 C A Continuous Drain Current V = 10V (Note 6) I GS D 16 T = +70C C 80 Pulsed Drain Current (10s Pulse, T =+25C, Package Limited) I A C DM 80 Pulsed Body Diode Current (10s Pulse, T =+25C, Package Limited) I A C SM 2 Maximum Body Diode Continuous Current I A S 6 Avalanche Current (Note 9), L=0.1mH I A AS Avalanche Energy (Note 9), L=0.1mH 1.8 mJ E AS Thermal Characteristics ( T = +25C unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 2 W P D 61 Thermal Resistance, Junction to Ambient (Note 5) C/W R JA Total Power Dissipation (Note 6) 37.8 W P D Thermal Resistance, Junction to Case (Note 6) R 3.3 C/W JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 100 - - V BV V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current - - 1 A I V = 80V, V = 0V DSS DS GS Gate-Source Leakage I - - 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 1.5 - 2.8 V V = V , I = 250A GS(TH) DS GS D - 50.6 62 V = 10V, I = 4.5A GS D m R DS(ON) Static Drain-Source On-Resistance - 61.2 77 V = 6V, I = 4A GS D R - 82.5 109 m V = 4.5V, I = 2.7A DS(ON) GS D Diode Forward Voltage - 0.76 1 V VSD VGS = 0V, IS = 1A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance - 228 - pF C iss V = 50V, V = 0V, DS GS Output Capacitance - 89.3 - pF C oss f = 1MHz Reverse Transfer Capacitance - 2.5 - pF C rss Gate Resistance - 8.2 - R V = 0V, V = 0V, f = 1MHz g DS GS - 2.5 - nC Total Gate Charge (V = 4.5V) Q GS g - - Total Gate Charge (V = 10V) Q 4.5 nC GS g V = 50V, I = 4.5A DS D - - Gate-Source Charge Q 0.6 nC gs - - Gate-Drain Charge Q 1.3 nC gd - - Turn-On Delay Time t 3.0 ns D(ON) - - Turn-On Rise Time 3.1 ns tR V = 50V, R = 11 DS L - - Turn-Off Delay Time 12.3 ns V = 10V, R = 3 t GS GEN D(OFF) Turn-Off Fall Time - 4.3 - ns t F Reverse Recovery Time - 22.9 - ns t RR I = 4.5A, di/dt = 300A/s F Reverse Recovery Charge - 45.2 - nC Q RR Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 6. Thermal resistance from junction to soldering point (on the exposed drain pad). 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 9. I and E ratings are based on low frequency and duty cycles to keep T = +25C. AS AS J 2 of 7 January 2019 DMT10H072LFV www.diodes.com Diodes Incorporated Datasheet number: DS40030 Rev. 5 - 2 ADVANCE INFORMATION AADDVVAANNCCEEDD IINNFFOORRMMAATTIIOONN