DMT15H017LPS Green 150V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features 100% Unclamped Inductive Switching (UIS) Test in Production I Max D BV R Max DSS DS(ON) Ensures More Reliable and Robust End Application T = +25C C Thermally Efficient Package-Cooler Running Applications 17.5m V = 10V 58A GS High Conversion Efficiency 150V Low R Minimizes On-State Losses DS(ON) 25.5m V = 4.5V 48A GS Low Input Capacitance Fast Switching Speed <1.1mm Package Profile Ideal for Thin Applications (PowerDI ) Description Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) This new generation N-Channel Enhancement Mode MOSFET is For automotive applications requiring specific change control designed to minimize R , yet maintain superior switching DS(ON) (i.e. parts qualified to AEC-Q101, PPAP capable, and performance. This device is ideal for use in notebook battery power manufactured in IATF 16949 certified facilities), please management and load switch. contact us or your local Diodes representative. DMT15H017LPS Marking Information D D D D = Manufacturers Marking T1517LPS = Product Ty pe Mark ing Code YYWW = Date Code Marking T1517LPS YY = Last Two Digits of Year (ex: 19 = 2019) WW = Week Code (01 to 53) YY WW S S S G Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage 150 V VDSS Gate-Source Voltage 20 V V GSS 9.4 Steady T = +25C A A Continuous Drain Current VGS = 10V (Note 6) ID State 7.5 T = +70C A 58 T = +25C Steady C Continuous Drain Current V = 10V (Note 7) I A GS D State 46 T = +70C C 230 Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I A DM 74 Maximum Continuous Body Diode Forward Current I A S 230 Pulsed Body Diode Current (10s Pulse, Duty Cycle = 1%) I A SM 14.5 Avalanche Current (Note 8), L = 3mH I A AS 315.4 Avalanche Energy (Note 8), L = 3mH E mJ AS Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 1.3 W T = +25C P A D Thermal Resistance, Junction to Ambient (Note 5) Steady State 99 C/W R JA Total Power Dissipation (Note 6) 2.3 W T = +25C P A D Thermal Resistance, Junction to Ambient (Note 6) Steady State 53 C/W R JA Total Power Dissipation (Note 7) 89 W T = +25C P C D Thermal Resistance, Junction to Case (Note 7) R 1.4 C/W JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 7. Thermal resistance from junction to soldering point (on the exposed drain pad). 8. I and E ratings are based on low frequency and duty cycles to keep T = +25C. AS AS J 2 of 8 DMT15H017LPS October 2019 Diodes Incorporated www.diodes.com Document number: DS41435 Rev. 2 - 2