X-On Electronics has gained recognition as a prominent supplier of DMT3009LDT-13 MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMT3009LDT-13 MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

DMT3009LDT-13 Diodes Incorporated

DMT3009LDT-13 electronic component of Diodes Incorporated
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Part No.DMT3009LDT-13
Manufacturer: Diodes Incorporated
Category: MOSFETs
Description: MOSFET 2 N Channel (Dual) 30V 30A (Tc) 3V @ 250uA 11.1 mΩ @ 14.4A,10V V-DFN3030-8 RoHS
Datasheet: DMT3009LDT-13 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.124 ea
Line Total: USD 1.12 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
   
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
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We are delighted to provide the DMT3009LDT-13 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMT3009LDT-13 and other electronic components in the MOSFETs category and beyond.

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The DMT3009LDT-13 is a dual MOSFET 2 N channel Transistor, made by Diodes Incorporated and manufactured using a V-DFN3030-8 RoHS package. It is rated at 30V 30A with a threshold voltage of 3V at 250uA. It has an on resistance of 11.1 mO at 14.4A and 10V gate-source voltage. It is designed to be used for a wide range of applications including load switching, voltage level translation, power management and motor control. This part is lead-free/RoHS compliant, halogen free/BFR free and supports both leaded and lead-free assembly.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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