DMT3011LDT
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary Features
I Max 0.6mm Profile Ideal for Low Profile Applications
D
Device
V R Max
(BR)DSS DS(ON) 2
T = +25C PCB Footprint of 4mm
A
8A Low Gate Threshold Voltage
20m @ V = 10V
GS
Q1 30V
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
6.3A
32m @ V = 4.5V
GS
Halogen and Antimony Free. Green Device (Note 3)
10.7A
11.1m @ V = 10V
GS
Q2 30V
13.8m @ V = 4.5V 9.6A
GS
Mechanical Data
Description
Case: V-DFN3030-8 (Type K)
This new generation MOSFET is designed to minimize the on-state
resistance (R ), yet maintain superior switching performance, Case Material: Molded Plastic, Green Molding Compound.
DS(ON)
UL Flammability Classification Rating 94V-0
making it ideal for high-efficiency power management applications.
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish NiPdAu over Copper Leadframe.
Applications
e4
Solderable per MIL-STD-202, Method 208
Mobile Computing
Weight: 0.02 grams (Approximate)
Point of Load
V-DFN3030-8 (Type K)
5 6 7 8
S2 S2 S2 G2
S1/D2
D1
PIN 1
D1 D1 D1 G1
PIN 1 PIN 1 4 3 2 1
Equivalent Circuit
Top View Bottom View Bottom View
Internal Schematic
Ordering Information (Note 4)
Part Number Case Packaging
DMT3011LDT-7 V-DFN3030-8 (Type K) 3,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
DMT3011LDT
Marking Information
T95 = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 14 for 2014)
WW = Week Code (01 to 53)
T95
Maximum Ratings (Q1 N-Channel) (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage 30 V
V
DSS
Gate-Source Voltage 20 V
V
GSS
Steady T = +25C 8
A
Continuous Drain Current (Note 5) V = 10V I A
GS D
State 21.5
T = +25C
C
Maximum Body Diode Forward Current (Note 5) I 2 A
S
Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 55 A
DM
14 A
Avalanche Current (L = 0.1mH) I
AS
9.8 mJ
Avalanche Energy (L = 0.1mH) E
AS
Maximum Ratings (Q2 N-Channel) (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage V 30 V
DSS
+20
Gate-Source Voltage V V
GSS
-16
Steady T = +25C 10.7
A
Continuous Drain Current (Note 5) V = 10V I A
GS D
State 28.9
T = +25C
C
Maximum Body Diode Forward Current (Note 5) 2 A
I
S
Pulsed Drain Current (10s Pulse, Duty cycle = 1%) 80 A
I
DM
I 18 A
Avalanche Current (L = 0.1mH) AS
E 16.2 mJ
Avalanche Energy (L = 0.1mH) AS
Thermal Characteristics
Characteristic Symbol Value Unit
Steady State
Thermal Resistance, Junction to Ambient (Note 5) R 65 C/W
JA
Total Power Dissipation (Note 5) 1.9 W
TA = +25C PD
Thermal Resistance, Junction to Case (Note 5) Steady State 9 C/W
R
JC
Total Power Dissipation (Note 5) 13.9 W
T = +25C P
C D
Operating and Storage Temperature Range -55 to +150 C
T T
J, STG
Note: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.
2 of 11
DMT3011LDT September 2015
Diodes Incorporated
www.diodes.com
Document number: DS37955 Rev. 2 - 2
ADVANCED INFORMATION
NEW PRODUCT
YYWW