DMT3020LFDB
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary Features and Benefits
0.6mm Profile Ideal for Low Profile Applications
I Max
D
V R Max
(BR)DSS DS(ON)
T = +25C
A Low Gate Threshold Voltage
Low On-Resistance
20m @ V = 10V 7.7A
GS
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
30V
32m @ V = 4.5V 6.1A
GS Halogen and Antimony Free. Green Device (Note 3)
Qualified to AEC-Q101 standards for High Reliability
Description
Mechanical Data
This new generation MOSFET is designed to minimize the on-state
Case: U-DFN2020-6 (Type B)
resistance (R ), yet maintain superior switching performance,
DS(ON)
Case Material: Molded Plastic, Green Molding Compound.
making it ideal for high-efficiency power management applications.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Applications Terminals: Finish NiPdAu Annealed over Copper Leadframe.
e4
Solderable per MIL-STD-202, Method 208
General Purpose Interfacing Switch
Terminals Connections: See Diagram Below
Power Management Functions
Weight: 0.0065 grams (Approximate)
U-DFN2020-6 (Type B)
D1 D2
S2
G2
D2
D1
D1
G1 G2
D2
G1
S1
S1 S2
Pin1
Bottom View
Internal Schematic
Ordering Information (Note 4)
Part Number Case Packaging
DMT3020LFDB-7 U-DFN2020-6 (Type B) 3,000/Tape & Reel
DMT3020LFDB-13 U-DFN2020-6 (Type B) 10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
DMT3020LFDB
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage 30 V
V
DSS
Gate-Source Voltage 20 V
V
GSS
Steady T = +25C 7.7
A
Continuous Drain Current (Note 6) V = 10V I A
GS D
State 6.2
T = +75C
A
Maximum Continuous Body Diode Forward Current (Note 6) I 2 A
S
Pulsed Drain Current (380s Pulse, Duty Cycle = 1%) I 50 A
DM
Thermal Characteristics
Characteristic Symbol Value Unit
Total Power Dissipation (Note 5) P 0.7 W
D
Steady State
Thermal Resistance, Junction to Ambient (Note 5) 170 C/W
R
JA
Total Power Dissipation (Note 6) 1.8 W
P
D
Steady State
Thermal Resistance, Junction to Ambient (Note 6) 70 C/W
R
JA
Operating and Storage Temperature Range -55 to +150 C
T T
J, STG
Electrical Characteristics (@TA = +25C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage BV 30 V V = 0V, I = 250A
DSS GS D
Zero Gate Voltage Drain Current T = +25C I 1.0 A V = 24V, V = 0V
J DSS DS GS
Gate-Source Leakage 100 nA
I V = 20V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage 1.0 3.0 V
V V = V , I = 250A
GS(TH) DS GS D
20 V = 10V, I = 9.0A
GS D
Static Drain-Source On-Resistance R m
DS (ON)
32
V = 4.5V, I = 7.0A
GS D
Diode Forward Voltage V 1.0 V V = 0V, I = 2A
SD GS S
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance C 393 pF
ISS
V = 15V, V = 0V,
DS GS
173
Output Capacitance C pF
OSS
f = 1.0MHz
27
Reverse Transfer Capacitance C pF
RSS
1.1
Gate Resistance R V = 0V, V = 0V, f = 1MHz
G DS GS
7.0
Total Gate Charge (V = 10V) Q nC
GS G
3.6
nC
Total Gate Charge (V = 4.5V) Q
GS G
V = 15V, I = 9A
DD D
Gate-Source Charge 0.9 nC
Q
GS
Gate-Drain Charge 1.5 nC
Q
GD
Turn-On Delay Time 1.8 ns
t
D(ON)
Turn-On Rise Time 1.9 ns
t V = 15V, V = 10V,
R DD GS
7.5
Turn-Off Delay Time t ns R = 6, I = 9A
D(OFF) G D
2.4
Turn-Off Fall Time t ns
F
10
Reverse Recovery Time t ns
RR
I = 9A, di/dt = 100A/s
F
2.6
Reverse Recovery Charge Q nC
RR
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.
7. I and E ratings are based on low frequency and duty cycles to keep T = +25C.
AS AS J
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
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DMT3020LFDB May 2016
Diodes Incorporated
www.diodes.com
Document number: DS38407 Rev. 2 - 2