DMT3020LFDF
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary Features
0.6mm Profile Ideal for Low Profile Applications
I
D max
2
V R
(BR)DSS DS(ON) max
PCB Footprint of 4mm
T = +25C
A
Low Gate Threshold Voltage
8.4A
17m @ V = 10V
GS
Low On-Resistance
30V
6.8A
28m @ V = 4.5V
GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. Green Device (Note 3)
Description
Mechanical Data
This new generation MOSFET is designed to minimize the on-state
resistance (R ) and yet maintain superior switching performance,
DS(ON)
Case: U-DFN2020-6 (Type F)
making it ideal for high efficiency power management applications.
Case Material: Molded Plastic, Green Molding Compound.
UL Flammability Classification Rating 94V-0
Applications
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish NiPdAu over Copper Leadframe. Solderable
General Purpose Interfacing Switch
per MIL-STD-202, Method 208
Power Management Functions
Weight: 0.0065 grams (Approximate)
U-DFN2020-6 (Type F)
U-DFN2020-6
D
G
Pin1
S
Pin Out
Equivalent Circuit
Top View
Bottom View
Bottom View
Ordering Information (Note 4)
Part Number Case Packaging
DMT3020LFDF-7 U-DFN2020-6 (Type F) 3,000/Tape & Reel
DMT3020LFDF-13 U-DFN2020-6 (Type F) 10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
DMT3020LFDF
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage V 30 V
DSS
Gate-Source Voltage V 20 V
GSS
Steady T = +25C 8.4
A
A
Continuous Drain Current (Note 6) V = 10.0V I
GS D
State 6.7
T = +70C
A
Steady T = +25C 6.8
A
A
Continuous Drain Current (Note 6) V = 4.5V I
GS D
State 5.4
T = +70C
A
Pulsed Drain Current (10s pulse, duty cycle = 1%) I 40 A
DM
Maximum Body Diode Continuous Current (Note 6) I 2 A
S
Avalanche Current (Note 7) L = 0.1mH I 11.4 A
AS
Avalanche Energy (Note 7) L = 0.1mH 6.5 mJ
E
AS
Thermal Characteristics
T = +25C 0.7
A
Total Power Dissipation (Note 5) W
P
D
T = +70C 0.4
A
Steady State
Thermal Resistance, Junction to Ambient (Note 5) 180 C/W
R
JA
T = +25C 1.8
A
Total Power Dissipation (Note 6) W
P
D
T = +70C 1.1
A
Steady State
Thermal Resistance, Junction to Ambient (Note 6) 70 C/W
R
JA
Operating and Storage Temperature Range T T -55 to +150 C
J, STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage 30.0 V
BV V = 0V, I = 250A
DSS GS D
1.0
Zero Gate Voltage Drain Current T = +25C I A V = 24V, V = 0V
J DSS DS GS
Gate-Source Leakage 100 nA
I V = 20V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage V 1.0 2.5 V V = V , I = 250A
GS(TH) DS GS D
13 17 V = 10V, I = 9.0A
GS D
Static Drain-Source On-Resistance m
R
DS(ON)
21 28 V = 4.5V, I = 7.0A
GS D
Diode Forward Voltage V 1.2 V V = 0V, I = 2A
SD GS S
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance C 393 pF
iss
V = 15V, V = 0V,
DS GS
173
Output Capacitance C pF
oss
f = 1.0MHz
Reverse Transfer Capacitance 27 pF
C
rss
Gate Resistance 1.1
R V = 0V, V = 0V, f = 1.0MHz
g DS GS
7.0 nC
Total Gate Charge (V = 10V) Q
GS g
3.6 nC
Total Gate Charge (V = 4.5V) Q
GS g
V = 15V, I = 9A
DD D
0.9
Gate-Source Charge Q nC
gs
1.5
Gate-Drain Charge Q nC
gd
1.8
Turn-On Delay Time t ns
D(ON)
1.9
Turn-On Rise Time t ns
R V = 15V, V = 10V,
DD GS
7.5
Turn-Off Delay Time t ns R = 6, I = 9A
D(OFF) G D
2.4
Turn-Off Fall Time ns
tF
Reverse Recovery Time 10 ns
t
RR
I = 9A, dI/dt = 100A/s
F
Reverse Recovery Charge 2.6 nC
Q
RR
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. I and E rating are based on low frequency and duty cycles to keep T = +25C.
AS AS J
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
2 of 7
May 2016
DMT3020LFDF
www.diodes.com Diodes Incorporated
Datasheet number: DS38243 Rev. 3 - 2
ADVANCE INFORMATION
ADVANCED INFORMATION