DMT32M5LFG Green 30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 Product Summary Features and Benefits Low R Ensures On-State Losses are Minimized DS(ON) I Max D Excellent Q R Product (FOM) gd DS(ON) BV R Max DSS DS(ON) T = +25C C Advanced Technology for DC-DC Converts Small Form Factor Thermally Efficient Package Enables Higher 1.7m V = 10V 100A GS Density End Products 30V 2.8m V = 4.5V 100A Occupies Just 33% of the Board Area Occupied by SO-8 Enabling GS Smaller End Product 100% UIS (Avalanche) Rated Description Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) This MOSFET is designed to minimize the on-state resistance (R ), yet maintain superior switching performance, making it DS(ON) ideal for high efficiency power management applications. Mechanical Data Case: PowerDI 3333-8 Applications Case Material: Molded Plastic,Gree Molding Compound. UL Flammability Classification Rating 94V-0 Backlighting Moisture Sensitivity: Level 1 per J-STD-020 Power Management Functions Terminal Connections Indicator: See Diagram DC-DC Converters Terminal Finish Matte Tin Annealed Over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.008 grams (Approximate) PowerDI3333-8 Pin 1 S D S 8 1 S G 7 2 6 3 G D D 5 4 D D S Top View Bottom View Top View Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging DMT32M5LFG-7 2,000/Tape & Reel PowerDI3333-8 DMT32M5LFG-13 3,000/Tape & Reel PowerDI3333-8 Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMT32M5LFG Maximum Ratings ( T = +25C, unless otherwise specified.) C Characteristic Symbol Value Unit Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 20 V GSS T = +25C 100 C Continuous Drain Current (Note 6) V = 10V I A GS D 100 T = +70C C T = +25C 30 A A Continuous Drain Current (Note 5) V = 10V I GS D 24 T = +70C A Maximum Continuous Body Diode Forward Current (Note 5) I 2.8 A S Pulsed Drain Current (380s Pulse, Duty Cycle = 1%) I 350 A DM Pulsed Body Diode Forward Current (380s Pulse, Duty Cycle = 1%) I 350 A SM Avalanche Current, L = 0.1mH I 46.7 A AS Avalanche Energy, L = 0.1mH 109 mJ E AS Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) T = +25C P 2.3 W A D Thermal Resistance, Junction to Ambient (Note 5) R 54 C/W JA Total Power Dissipation (Note 6) T = +25C P 50 W C D Thermal Resistance, Junction to Case (Note 6) R 2.5 C/W JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) J Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 30 V BV V = 0V, I = 1mA DSS GS D 1 V = 24V, V = 0V DS GS Zero Gate Voltage Drain Current A I DSS 10 V = 30V, V = 0V DS GS V = 20V, V = 0V GS DS Gate-Source Leakage 10 A I GSS V = -16V, V = 0V GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 1 1.4 3 V V = V , I = 250A GS(TH) DS GS D 1.4 1.7 VGS = 10V, ID = 20A m 2.1 2.8 V = 4.5V, I = 15A GS D Static Drain-Source On-Resistance R DS(ON) V = 10V, I = 20A, GS D 1.9 2.6 m T = +125C (Note 8) J Diode Forward Voltage V 0.7 1 V V = 0V, I = 2A SD GS S DYNAMIC CHARACTERISTICS (Note 8) 4066 Input Capacitance C iss VDS = 15V, VGS = 0V, 1736 Output Capacitance C pF oss f = 1MHz 333 Reverse Transfer Capacitance C rss 0.71 Gate Resistance R V = 0V, V = 0V, f = 1MHz g DS GS 34 Total Gate Charge (V = 4.5V) Q GS g 67.7 Total Gate Charge (V = 10V) Q GS g nC V = 15V, I = 20A DS D Gate-Source Charge 8 Q gs Gate-Drain Charge 15 Q gd Turn-On Delay Time 7.2 t D(ON) Turn-On Rise Time 13.2 t V = 15V, V = 10V, R DD GS ns 37.4 Turn-Off Delay Time t R = 3, I = 20A D(OFF) G D 23.9 Turn-Off Fall Time t F 28.7 Bodyy Diode Reverse Recovery Time t ns RR I = 15A, di/dt = 500A/s F 45.8 Body Diode Reverse Recovery Charge Q nC RR Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 6. Thermal resistance from junction to soldering point (on the exposed drain pad). 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 7 DMT32M5LFG June 2017 Diodes Incorporated www.diodes.com Document number: DS39020 Rev. 4 - 2