DMT47M2LDVQ DUAL 40V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 Product Summary Features 100% Unclamped Inductive Switching, Test in Production I Max D BV R Max DSS DS(ON) Ensures More Reliable and Robust End Application T = +25C C High Conversion Efficiency 10.8m V = 10V GS 30.2A Low R Minimizes On-State Losses DS(ON) 40V 15m V = 4.5V 25.6A GS Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications PPAP Capable (Note 4) This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a Mechanical Data PPAP and is ideal for use in: Case: PowerDI 3333-8 Motor Control Case Material: Molded Plastic, Green Molding Compound. Power Management Functions UL Flammability Classification Rating 94V-0 DC-DC Converters Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.072 grams (Approximate) PowerDI3333-8 (Type UXC) D2 D1 D1 D1 D2 D2 G2 G1 S1 G1 S2 G2 Pin 1 S2 S1 Equivalent Circuit Top View Bottom View Ordering Information (Note 5) Part Number Case Packaging DMT47M2LDVQ-7 PowerDI3333-8 (Type UXC) 2000/Tape & Reel DMT47M2LDVQ-13 PowerDI3333-8 (Type UXC) 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DMT47M2LDVQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 40 V DSS Gate-Source Voltage V 20 V GSS T = +25C 30.2 C Continuous Drain Current (Note 7), V = 10V I A GS D 24.2 T = +100C C T = +25C 11.9 A A Continuous Drain Current (Note 6), V = 10V I GS D 9.5 T = +70C A Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 120 A DM Maximum Continuous Body Diode Forward Current (Note 7) I 16.4 A S Pulsed Body Diode Forward Current (10s Pulse, Duty Cycle = 1%) I 120 A SM Avalanche Current, L = 0.1mH (Note 8) I 22.1 A AS Avalanche Energy, L = 0.1mH (Note 8) 24.4 mJ E AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 6) 2.34 W T = +25C P A D Thermal Resistance, Junction to Ambient (Note 6) 53.7 C/W R JA Total Power Dissipation (Note 7) 14.8 W T = +25C P C D Thermal Resistance, Junction to Case (Note 7) R 8.43 C/W JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage BV 40 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current I 1 A V = 32V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 9) Gate Threshold Voltage V 1.2 1.4 2.3 V V = V , I = 250A GS(TH) DS GS D 8.4 10.8 V = 10V, I = 20A GS D Static Drain-Source On-Resistance m R DS(ON) 10.9 15 V = 4.5V, I = 10A GS D Diode Forward Voltage 0.9 1.2 V V V = 0V, I = 20A SD GS S DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance 891 C iss V = 20V, V = 0V, DS GS Output Capacitance 490 pF C oss f = 1MHz Reverse Transfer Capacitance 14.8 C rss Gate Resistance R 1.87 V = 0V, V = 0V, f = 1MHz g DS GS Total Gate Charge (V = 10V) Q 14.0 GS g Total Gate Charge (V = 4.5V) Q 6.72 GS g nC V = 20V, I = 20A DS D Gate-Source Charge Q 1.04 gs Gate-Drain Charge Q 2.52 gd Turn-On Delay Time 3.95 t D(ON) Turn-On Rise Time 5.41 t V = 20V, V = 10V, R DD GS ns Turn-Off Delay Time 15.4 R = 3, I = 20A t G D D(OFF) Turn-Off Fall Time 8.53 t F Body Diode Reverse Recovery Time 56.6 ns t RR I = 20A, di/dt = 100A/s F Body Diode Reverse Recovery Charge Q 40.0 nC RR Notes: 6. Device mounted on FR-4 substrate PCB, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 7. Thermal resistance from junction to soldering point (on the exposed drain pad). 8. I and E ratings are based on low frequency and duty cycles to keep T = +25C. AS AS J 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. 2 of 7 DMT47M2LDVQ May 2019 Diodes Incorporated www.diodes.com Document number: DS41516 Rev. 2 - 2