DMT6004SPS Green 60V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features 100% Unclamped Inductive Switching Ensures More Reliable I MAX D and Robust End Application BV R MAX DSS DS(ON) T = +25C C Low R Minimizes Power Losses (Note 9) DS(ON) Low Q Minimizes Switching Losses g 60V 3.1m V = 10V 100A GS Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance Case: PowerDI 5060-8 (R ) and yet maintain superior switching performance, making it Case Material: Molded Plastic, Green Molding Compound DS(ON) ideal for high-efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Switching Terminal Finish - Matte Tin Annealed over Copper Leadframe Synchronous Rectification Solderable per MIL-STD-202, Method 208 DC-DC Converters Weight: 0.097 grams (Approximate) PowerDI5060-8 S D Pin1 S D D S G D Top View Top View Bottom View Internal Schematic Pin Configuration Ordering Information (Note 4) Part Number Case Packaging DMT6004SPS-13 PowerDI5060-8 2,500 / Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 2. See DMT6004SPS Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 60 V DSS Gate-Source Voltage V 20 V GSS T = +25C 23 A Continuous Drain Current (Note 5) I A D 18 T = +70C A T = +25 C 100 (Note 9) Continuous Drain Current (Note 6) I A D T = +100C 100 C Maximum Continuous Body Diode Forward Current (Note 6) I 88 A S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 200 A IDM Pulsed Body Diode Forward Current (10s Pulse, Duty Cycle = 1%) 200 A I SM Avalanche Current, L=0.2mH 45 A I AS 200 Avalanche Energy, L=0.2mH E mJ AS Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) T = +25C P 2.5 W A D Thermal Resistance, Junction to Ambient R 47 C/W JA Total Power Dissipation (Note 6) T = +25C P 139 W C D Thermal Resistance, Junction to Case R 0.9 C/W JC Operating and Storage Temperature Range -55 to +150 C TJ, TSTG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 60 V V = 0V, I = 1mA DSS GS D Zero Gate Voltage Drain Current I 1 A V = 48V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 2 2.5 4 V V = V , I = 250A GS(TH) DS GS D Static Drain-Source On-Resistance R 3.1 m V = 10V, I = 50A DS(ON) GS D Diode Forward Voltage V 0.9 1.2 V V = 0V, I = 20A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C 4,556 iss VDS = 30V, VGS = 0V, Output Capacitance 1,383 pF C oss f = 1MHz Reverse Transfer Capacitance 105.2 C rss Gate Resistance 0.7 R V = 0V, V = 0V, f = 1MHz g DS GS 95.4 Total Gate Charge Q g V = 30V, I = 90A, DD D 21.6 Gate-Source Charge Q nC gs V = 10V GS 20.4 Gate-Drain Charge Q gd 13.2 Turn-On Delay Time t D(ON) 11.7 Turn-On Rise Time t R V = 30V, V = 10V, DD GS ns 31 I = 90A, R = 3.5 Turn-Off Delay Time t D g D(OFF) Turn-Off Fall Time 12 tF Body Diode Reverse Recovery Time 50.5 ns t RR I = 50A, di/dt = 100A/s F Body Diode Reverse Recovery Charge 80.8 nC Q RR Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate. 6. Thermal resistance from junction to soldering point (on the exposed drain pad). 7 .Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 9. Package limited. 2 of 7 DMT6004SPS February 2018 Diodes Incorporated www.diodes.com Document number: DS37324 Rev. 3 - 2