DMT6016LFDF 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I 100% Unclamped Inductive Switch (UIS) Test in Production D Max BV R DSS DS(ON) Max T = +25C A 0.6mm Profile Ideal for Low Profile Applications 2 16m V = 10V 8.9A GS PCB Footprint of 4mm 60V 27m V = 4.5V 6.8A GS Low On-Resistance Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Description Halogen and Antimony Free.Gree Device (Note 3) This new generation MOSFET is designed to minimize the on-state Mechanical Data resistance (R ) and yet maintain superior switching performance, DS(ON) making it ideal for high-efficiency power management applications. Case: U-DFN2020-6 (Type F) Case Material: Molded Plastic, Green Molding Compound. Applications UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Load Switch Terminals: Finish NiPdAu over Copper Leadframe. Adaptor Switch Solderable per MIL-STD-202, Method 208 e4 Notebook PC Weight: 0.007 grams (Approximate) D U-DFN2020-6 (Type F) G Pin1 S Pin Out Top View Bottom View Bottom View Equivalent Circuit Ordering Information (Note 4) Part Number Marking Reel Size (inches) Quantity per Reel DMT6016LFDF-7 T6 7 3,000 DMT6016LFDF-13 T6 13 10,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMT6016LFDF Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 60 V DSS Gate-Source Voltage V 20 V GSS Steady TA = +25C 8.9 A I D State 7.1 T = +70C A Continuous Drain Current (Note 6) V = 10V GS T = +25C 11.1 A t<10s I A D 8.9 T = +70C A Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 60 A DM Maximum Body Diode Continuous Current 2.2 A IS Avalanche Current (Note 7) L = 0.1mH 15.3 A I AS Avalanche Energy (Note 7) L = 0.1mH 11.7 mJ E AS Thermal Characteristics Characteristic Symbol Value Unit 0.82 T = +25C A Total Power Dissipation (Note 5) P W D 0.52 T = +70C A Steady State 153 Thermal Resistance, Junction to Ambient (Note 5) R C/W JA t<10s 97 1.9 T = +25C A Total Power Dissipation (Note 6) P W D 1.2 T = +70C A Steady State 66 Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 42 C/W Thermal Resistance, Junction to Case (Note 6) 14.7 R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage 60 V BV V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current I 1 A V = 48V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V 1.0 3.0 V V = V , I = 250A GS(TH) DS GS D 12.2 16 V = 10V, I = 10A GS D Static Drain-Source On-Resistance m R DS(ON) 17.2 27 V = 4.5V, I = 6A GS D Diode Forward Voltage 0.7 1.2 V VSD VGS = 0V, IS = 1A DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance 864 Ciss V = 30V, V = 0V DS GS Output Capacitance 282 pF C oss f = 1.0MHz Reverse Transfer Capacitance 27.1 C rss Gate Resistance 1.35 R V = 0V, V = 0V, f = 1.0MHz g DS GS 17 Total Gate Charge (V = 10V) Q GS g Total Gate Charge (V = 4.5V) Q 8.4 GS g nC V = 30V, I = 10A DS D Gate-Source Charge Q 3.1 gs Gate-Drain Charge Q 4.3 gd Turn-On Delay Time t 3.4 D(ON) Turn-On Rise Time 5.2 tR V = 10V, V = 30V, R = 6, GS DD g nS Turn-Off Delay Time 12.9 I = 10A t D D(OFF) Turn-Off Fall Time 6.8 t F Body Diode Reverse Recovery Time 22 nS t I = 10A, dI/dt = 100A/s RR S Body Diode Reverse Recovery Charge 11.1 nC Q I = 10A, dI/dt = 100A/s RR S Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. I and E rating are based on low frequency and duty cycles to keep T = +25C. AS AS J 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2 of 7 August 2016 DMT6016LFDF www.diodes.com Diodes Incorporated Datasheet number: DS37203 Rev. 6 - 2