DMT6016LSS 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I max D V R max (BR)DSS DS(ON) Low Input Capacitance T = +25C A 9.2 A 18m V = 10V Fast Switching Speed GS 60V 7.5 A 28m V = 4.5V GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Mechanical Data Description and Applications This MOSFET is designed to minimize the on-state resistance Case: SO-8 (R ) and maintain superior switching performance, making it Case Material: Molded Plastic,Gree Molding Compound. DS(ON) ideal for high efficiency power management applications. UL Flammability Classification Rating 94V-0 Load Switch Moisture Sensitivity: Level 1 per J-STD-020 Adaptor Switch Terminal Connections Indicator: See diagram Notebook PC Terminals: Finish Matte Tin annealed over Copper Leadframe. e3 Solderable per MIL-STD-202, Method 208 Weight: 0.076 grams (approximate) D SO-8 S D S D Pin1 G S D G D S Pin-Out Equivalent Circuit Top View Top View Ordering Information (Note 4) Part Number Case Packaging DMT6016LSS-13 SO-8 2500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMT6016LSS Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage 60 V VDSS Gate-Source Voltage 20 V V GSS Steady T = +25C 9.2 A A I D State 7.4 T = +70C A Continuous Drain Current (Note 6) V = 10V GS T = +25C 11.9 A t<10s I A D 9.5 TA = +70C Steady T = +25C 7.5 A A I D State 6.0 T = +70C A Continuous Drain Current (Note 6) VGS = 4.5V T = +25C 9.7 A t<10s I A D 7.7 T = +70C A 60 Pulsed Drain Current (10s pulse, duty cycle = 1%) A IDM 2 Maximum Continuous Body Diode Forward Current (Note 6) A I S Avalanche Current (Note 7) L = 0.1mH 15.3 A I AS Avalanche Energy (Note 7) L = 0.1mH 11.7 mJ E AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Total Power Dissipation (Note 5) P 1.5 W D Steady State 85 C/W Thermal Resistance, Junction to Ambient (Note 5) R JA t<10s 45 C/W Total Power Dissipation (Note 6) P 2.1 W D Steady State 74 C/W Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 37 C/W Thermal Resistance, Junction to Case 13 C/W R JC Operating and Storage Temperature Range T T -55 to 150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV 60 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current 1 A IDSS VDS = 48V, VGS = 0V Gate-Source Leakage 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage 1 2.5 V V V = V , I = 250A GS(th) DS GS D 18 V = 10V, I = 10A GS D Static Drain-Source On-Resistance m R DS (ON) 28 VGS = 4.5V, ID = 6A Diode Forward Voltage (Note 7) 0.7 1.2 V V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance 864 C iss V = 30V, V = 0V, DS GS Output Capacitance C 282 pF oss f = 1MHz Reverse Transfer Capacitance C 27 rss Gate resistance R 1.3 V = 0V, V = 0V, f = 1MHz g DS GS Total Gate Charge (V = 4.5V) Q 8.4 GS g Total Gate Charge (V = 10V) Q 17 GS g nC V = 30V, I = 10A DS D Gate-Source Charge 3.1 Q gs Gate-Drain Charge 4.3 Q gd Turn-On Delay Time 3.4 t D(on) Turn-On Rise Time 5.2 t V = 10V, V = 30V, r GS DS ns Turn-Off Delay Time 13 = 6, I = 10A t RG D D(off) Turn-Off Fall Time t 7 f Reverse Recovery Time T 22 ns rr I = 10A, di/dt = 100A/s F Reverse Recovery Charge Q 11 nC rr Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 7. I and E rating are based on low frequency and duty cycles to keep T = +25C. AS AS J 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2 of 6 September 2014 DMT6016LSS Diodes Incorporated www.diodes.com Document number: DS37237 Rev. 4 - 2 NEW PRODUCT ADVANCE INFORMATION ADVANCED INFORMATION