DMT67M8LPSW 60V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features I D MAX 100% Unclamped Inductive Switching (UIS) Test in Production BV R DSS DS(ON) MAX T = +25C C Ensures More Reliable and Robust End Application. 82A 6.2m V = 10V GS High Conversion Efficiency 60V 8.5m V = 4.5V 70A GS Low R Minimizes On State Losses DS(ON) Low Input Capacitance Fast Switching Speed ESD Protected Gate Wettable Flank for Improved Optical Inspection Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance Case: PowerDI 5060-8 (R ) yet maintain superior switching performance, making it ideal DS(ON) Case Material: Molded Plastic, Green Molding Compound. for high-efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Synchronous Rectifier Terminal FinishMatte Tin Annealed over Copper Leadframe DC-DC Converters Solderable per MIL-STD-202, Method 208 Power Management Weight: 0.097 grams (Approximate) PowerDI5060-8 (SWP) (Type Q) D S D Pin1 S D G S D G D ESD PROTECTED Gate Protection S Diode Top View Top View Bottom View Internal Schematic Pin Configuration Ordering Information (Note 4) Part Number Case Packaging DMT67M8LPSW-13 PowerDI5060-8 (SWP) (Type Q) 2500 / Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DMT67M8LPSW Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 60 V DSS Gate-Source Voltage V 20 V GSS 17.3 T = +25C A A Continuous Drain Current (Note 5) V = 10V I GS D 13.8 T = +70C A 82 T = +25C C Continuous Drain Current (Note 6) V = 10V I A GS D 65.6 T = +70C C Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 320 A DM Maximum Continuous Body Diode Forward Current (Note 6) I 82 A S Pulsed Body Diode Forward Current (10s Pulse, Duty Cycle = 1%) I 320 A SM Avalanche Current, L = 0.3mH 23.7 A I AS Avalanche Energy, L = 0.3mH 84.5 mJ E AS Thermal Characteristics Characteristic Symbol Value Unit 2.8 Total Power Dissipation (Note 5) T = +25C P W A D 45 Thermal Resistance, Junction to Ambient (Note 5) R C/W JA 62.5 Total Power Dissipation (Note 6) T = +25C P W C D 2 Thermal Resistance, Junction to Case (Note 6) R C/W JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 60 V BV V = 0V, I = 1mA DSS GS D Zero Gate Voltage Drain Current I 1 A V = 48V, V = 0V DSS DS GS Gate-Source Leakage I 10 A V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 1.2 1.64 2.5 V V = V , I = 250A GS(TH) DS GS D 4.4 6.2 V = 10V, I = 20A GS D Static Drain-Source On-Resistance m R DS(ON) 6.2 8.5 V = 4.5V, I = 20A GS D Diode Forward Voltage 0.7 1.2 V VSD VGS = 0V, IS = 1A DYNAMIC CHARACTERISTICS (Note 8) 2130 Input Capacitance Ciss V = 30V, V = 0V, DS GS Output Capacitance 786 pF C oss f = 1MHz Reverse Transfer Capacitance 70 C rss Gate Resistance 0.6 R V = 0V, V = 0V, f = 1MHz g DS GS 20 Total Gate Charge (V = 4.5V) Q GS g 37.5 Total Gate Charge (V = 10V) Q GS g nC V = 30V, I = 20A DS D 5.4 Gate-Source Charge Q gs 9.5 Gate-Drain Charge Q gd 5.5 Turn-On Delay Time t D(ON) 6.8 Turn-On Rise Time tR V = 30V, V = 10V, DD GS ns 22.1 Turn-Off Delay Time I = 20A, R = 3 t D g D(OFF) Turn-Off Fall Time 10.8 t F Reverse Recovery Time 26.9 ns t RR I = 20A, di/dt = 300A/s F Reverse Recovery Charge 56.8 nC Q RR Notes: 5. Device mounted on FR-4 substrate PCB, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 6. Thermal resistance from junction to soldering point (on the exposed drain pad). 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 7 DMT67M8LPSW June 2019 Diodes Incorporated www.diodes.com Document Number: DS41609 Rev. 2 - 2