DMT68M8LSS 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I Max High Conversion Efficiency D BV R Max DSS DS(ON) T = +25C Low R Minimizes On-State Losses A DS(ON) Low Input Capacitance 8.5m V = 10V 12.1A GS 60V Fast Switching Speed 12m V = 4.5V 10.2A GS ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance (R ), yet maintain superior switching performance, making it Case: SO-8 DS(ON) ideal for high efficiency power management applications. Case Material: Molded Plastic,Gree Molding Compound. UL Flammability Classification Rating 94V-0 High Frequency Switching Moisture Sensitivity: Level 1 per J-STD-020 Synchronous Rectification Terminal Finish - Matte Tin Annealed over Copper Leadframe. DC-DC Converters Solderable per MIL-STD-202, Method 208 Weight: 0.074 grams (Approximate) D SO-8 S D S D G S D ESD PROTECTED G D Gate Protection S Diode Top View Top View Internal Schematic Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging DMT68M8LSS-13 SO-8 2,500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMT68M8LSS Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 60 V DSS Gate-Source Voltage V 20 V GSS T = +25C 12.1 A I A D 9.7 T = +70C A Continuous Drain Current (Note 6) V = 10V GS T = +25C 28.9 C A I D 9.7 T = +70C C Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 100 A DM Maximum Continuous Body Diode Forward Current (Note 6) I 20 A S Pulsed Body Diode Forward Current (10s Pulse, Duty Cycle = 1%) I 100 A SM 19 Avalanche Current, L = 0.3mH I A AS Avalanche Energy, L = 0.3mH 54.2 A E AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) P 1.3 W D Thermal Resistance, Junction to Ambient (Note 5) 93 C/W R JA Total Power Dissipation (Note 6) 1.9 W P D Thermal Resistance, Junction to Ambient (Note 6) R 67 C/W JA Thermal Resistance, Junction to Case (Note 6) R 11.7 C/W JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics (T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 60 V BV V = 0V, I = 1mA DSS GS D Zero Gate Voltage Drain Current 1 A I V = 48V, V = 0V DSS DS GS Gate-Source Leakage 10 A I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 1 3 V V = V , I = 250A GS(TH) DS GS D 6.7 8.5 V = 10V, I = 13.5A GS D Static Drain-Source On-Resistance R m DS(ON) 8.9 12 V = 4.5V, I = 11.5A GS D Diode Forward Voltage V 0.9 1.2 V V = 0V, I = 20A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 2107 C iss V = 30V, V = 0V, DS GS Output Capacitance 634 pF C oss f = 1MHz Reverse Transfer Capacitance 48 C rss Gate Resistance R 1.8 V = 0V, V = 0V, f = 1MHz g DS GS Total Gate Charge (V = 10V) Q 31.8 GS g Total Gate Charge (V = 4.5V) Q 15.6 GS g nC V = 30V, I = 20A DD D Gate-Source Charge Q 3.4 gs Gate-Drain Charge Q 6.6 gd Turn-On Delay Time t 4.6 D(ON) Turn-On Rise Time 7.9 t V = 30V, V = 10V, R DD GS ns Turn-Off Delay Time 25.2 I = 20A, R = 3.3 t D g D(OFF) Turn-Off Fall Time 13.9 t F Body Diode Reverse Recovery Time ns t 19.3 RR I = 15A, di/dt = 500A/s F Body Diode Reverse Recovery Charge Q 38.1 nC RR Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 7 DMT68M8LSS May 2017 Diodes Incorporated www.diodes.com Document number: DS39396 Rev. 2 - 2