X-On Electronics has gained recognition as a prominent supplier of DMT69M8LSS-13 MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMT69M8LSS-13 MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

DMT69M8LSS-13 Diodes Incorporated

Name: DMT69M8LSS-13
Brand: Diodes Incorporated
SKU: DMT69M8LSS13_Diodes Incorporated
Availability: OutOfStock
Rating: 5 (11 reviews)

DMT69M8LSS-13 electronic component of Diodes Incorporated

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Part No.	DMT69M8LSS-13
Manufacturer:	Diodes Incorporated
Category:	MOSFETs
Description:	MOSFET 60V N-Ch Enh FET 14mOhm 4.5Vgs 8.4A
Datasheet:	DMT69M8LSS-13 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.1851 ea
Line Total: USD 0.19

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

DMT69M8LSS-13 More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Mon. 09 Dec to Thu. 12 Dec MOQ : 1 Multiples : 1	1 : USD 0.1851 10 : USD 0.1814 30 : USD 0.179 100 : USD 0.1766

Specifications

Manufacturer Diodes Incorporated Diodes Incorporated
Product Category MOSFETs MOSFETs
Category MOSFET MOSFET
Rohs y y
Package SO - 8 SO - 8
Brand Category Diodes Incorporated Diodes Incorporated
Fet Type - -
Drain To Source Voltagevdss - -
Continuous Drain Current Id @ 25°C - -
Vgsth Max @ Id - -
Rds On Max @ Id Vgs - -
Power Dissipation-Max Ta 25°C - -
Drain Source Voltage Vdss 60 V 60 V
Continuous Drain Current Id 9.8 A 9.8 A
Drain Source On Resistance Rdson@Vgs Id 12 mOhms @10V , 13.5A 12 mOhms @10V , 13.5A
Power Dissipation Pd 1.25 W 1.25 W
Gate Threshold Voltage Vgsth@Id 2 V @250uA 2 V @250uA
Type N Channel N Channel

We are delighted to provide the DMT69M8LSS-13 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMT69M8LSS-13 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The Diodes Incorporated DMT69M8LSS-13 is an N-channel enhancement field-effect transistor (MOSFET) with a peaked 60V drain-to-source voltage rating. It has a low on-resistance of 14mOhms and a 4.5V gate-to-source voltage rating, allowing for maximum effective current delivery of 8.4A. This particular MOSFET is manufactured by Diodes Incorporated in their PQFN (Plastic Quad Flat No-lead) package, measuring 6 x 6mm x 0.9mm with electrical terminals in a surface-mount configuration.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

DIO may also be referenced as

Diodes
DIODES INC
DIODES INC / ZETEX
DIODES INC.
Diodes Inc. / Pericom
Diodes Zetex
DiodesZetex
PAM(Diodes Inc)
PER
Pericom
PERICOM SEMI
Pericom Semiconductor
Pericom Technology
Pericom/Diodes
ZTX

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