DMT8008LFG Green 80V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low R Ensures On-State Losses are Minimized I Max DS(ON) D BV R Max DSS DS(ON) Excellent Q R Product (FOM) T = +25C gd DS(ON) C Advanced Technology for DC-DC Converts 6.9m V = 10V 48A GS Small Form Factor Thermally Efficient Package Enables Higher 80V Density End Products 10.4m V = 4.5V 38A GS Occupies Just 33% of the Board Area Occupied by SO-8 Enabling Smaller End Product Description 100% Unclamped Inductive Switching (UIS) Test in Production Ensures More Reliable and Robust End Application This MOSFET is designed to minimize the on-state resistance Lead-Free Finish RoHS Compliant (Notes 1 & 2) (R ), yet maintain superior switching performance, making it DS(ON) Halogen and Antimony Free. Green Device (Note 3) ideal for high efficiency power management applications. Mechanical Data Applications Case: PowerDI 3333-8 Backlighting Case Material: Molded Plastic,Gree Molding Compound. Power Management Functions UL Flammability Classification Rating 94V-0 DC-DC Converters Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Terminal Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.072 grams (Approximate) PowerDI3333-8 Pin 1 D S S 8 1 S G 7 2 6 3 G D D 5 4 D D S Top View Top View Bottom View Equivalent Circuit Pin-Out Ordering Information (Note 4) Part Number Case Packaging DMT8008LFG-7 2,000/Tape & Reel PowerDI3333-8 DMT8008LFG-13 3,000/Tape & Reel PowerDI3333-8 Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 2. See DMT8008LFG Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 80 V DSS Gate-Source Voltage V 20 V GSS T = +25C 48 C Continuous Drain Current (Note 7) V = 10V I A GS D 38 T = +70C C T = +25C 16 A A Continuous Drain Current (Note 6) V = 10V I GS D 13 T = +70C A Maximum Continuous Body Diode Forward Current (Note 6) I 45 A S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 192 A DM Pulsed Body Diode Forward Current (10s Pulse, Duty Cycle = 1%) I 192 A SM Avalanche Current, L = 1mH (Note 8) I 18 A AS Avalanche Energy, L = 1mH (Note 8) 162 mJ E AS Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 1.0 W T = +25C P A D Thermal Resistance, Junction to Ambient (Note 5) Steady State 126 C/W R JA Total Power Dissipation (Note 6) 2.5 W T = +25C P A D Thermal Resistance, Junction to Ambient (Note 6) Steady State R 49 C/W JA Total Power Dissipation (Note 7) 23.5 W T = +25C P C D Thermal Resistance, Junction to Case (Note 7) R 5.3 C/W JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage 80 V BV V = 0V, I = 1mA DSS GS D Zero Gate Voltage Drain Current 1 A I V = 64V, V = 0V DSS DS GS Gate-Source Leakage 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 9) Gate Threshold Voltage V 1.2 2.5 V V = V , I = 1mA GS(TH) DS GS D 5.3 6.9 V = 10V, I = 20A GS D Static Drain-Source On-Resistance m R DS(ON) 7.9 10.4 V = 4.5V, I = 10A GS D Diode Forward Voltage V 0.8 1.2 V V = 0V, I = 20A SD GS S DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance C 2254 iss V = 40V, V = 0V, DS GS Output Capacitance C 745 pF oss f = 1MHz Reverse Transfer Capacitance 31 C rss Gate Resistance 1.98 R V = 0V, V = 0V, f = 1MHz g DS GS 18.3 Total Gate Charge (V = 4.5V) Q GS g 37.7 Total Gate Charge (V = 10V) Q GS g nC V = 40V, I = 14A DS D Gate-Source Charge 5.3 Q gs Gate-Drain Charge Q 7.8 gd Turn-On Delay Time t 6.9 D(ON) Turn-On Rise Time t 12 R V = 40V, V = 10V, DD GS ns Turn-Off Delay Time t 37 I = 14A, R = 6 D(OFF) D G Turn-Off Fall Time t 21 F Body Diode Reverse Recovery Time 42 ns t RR I = 14A, di/dt = 100A/s S Body Diode Reverse Recovery Charge 53 nC Q RR Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 7. Thermal resistance from junction to soldering point (on the exposed drain pad). 8. I and E ratings are based on low frequency and duty cycles to keep T = +25C. AS AS J 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. 2 of 7 DMT8008LFG September 2019 Diodes Incorporated www.diodes.com Document number: DS41919 Rev. 2 - 2