DMT8012LSS
80V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary Features and Benefits
I Max 100% Unclamped Inductive Switch (UIS) Test in Production
D
BV R Max
DSS DS(ON)
T = +25C High Conversion Efficiency
A
Low R Minimizes On-State Losses
DS(ON)
16.5m @ V = 10V 9.7A
GS
Low Input Capacitance
80V
Fast Switching Speed
20m @ V = 4.5V 8.8A
GS
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. Green Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications Mechanical Data
This new generation N-Channel Enhancement Mode MOSFET is Case: SO-8
designed to minimize R , yet maintain superior switching Case Material: Molded Plastic,Gree Molding Compound.
DS(ON)
performance. This device is ideal for use in: UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Notebook Battery Power Management Terminal Finish Matte Tin Annealed over Copper Leadframe.
Loadswitches Solderable per MIL-STD-202, Method 208
Backlighting Weight: 0.074 grams (Approximate)
Power Management Functions
DC-DC Converters
D
S D
SO-8
S
D
G
S
D
G
D
S
Top View Equivalent Circuit
Top View
Internal Schematic
Ordering Information (Note 4)
Part Number Case Packaging
DMT8012LSS-13 SO-8 2,500/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
DMT8012LSS
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage 80 V
V
DSS
Gate-Source Voltage 20 V
V
GSS
Steady T = +25C 9.7
A
A
I
D
State 7.8
T = +70C
A
Continuous Drain Current (Note 6) V = 10V
GS
T = +25C 11.6
A
t<10s I A
D
9.3
T = +70C
A
Maximum Continuous Body Diode Forward Current (Note 6) 3 A
I
S
Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 80 A
I
DM
Avalanche Current, L=0.1mH 11.6 A
I
AS
Avalanche Energy, L=0.1mH E 10.2 mJ
AS
Thermal Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Total Power Dissipation (Note 5) 1.5 W
P
D
Steady State 80 C/W
Thermal Resistance, Junction to Ambient (Note 5) R
JA
t<10s 48 C/W
Total Power Dissipation (Note 6) 2 W
P
D
Steady State 53 C/W
Thermal Resistance, Junction to Ambient (Note 6) R
JA
t<10s 37 C/W
Thermal Resistance, Junction to Case (Note 6) 6.5 C/W
R
JC
Operating and Storage Temperature Range -55 to +150 C
T T
J, STG
Electrical Characteristics (@TA = +25C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage 80 V
BV V = 0V, I = 250A
DSS GS D
Zero Gate Voltage Drain Current 1 A
I V = 64V, V = 0V
DSS DS GS
Gate-Source Leakage 100 nA
I V = 20V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage V 1 3 V V = V , I = 250A
GS(TH) DS GS D
12.7
16.5 V = 10V, I = 12A
GS D
Static Drain-Source On-Resistance R m
DS(ON)
15
20 V = 4.5V, I = 6A
GS D
Diode Forward Voltage V 0.9 1.2 V V = 0V, I = 20A
SD GS S
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance C 1,949
ISS
V = 40V, V = 0V,
DS GS
Output Capacitance 177 pF
C
OSS
f = 1MHz
Reverse Transfer Capacitance 10
C
RSS
Gate Resistance 0.7
R V = 0V, V = 0V, f = 1MHz
G DS GS
15
Total Gate Charge (V = 4.5V) Q
GS G
Total Gate Charge (V = 10V) Q 34
GS G
nC
VDS = 40V, ID = 12A
Gate-Source Charge Q 6
GS
Gate-Drain Charge Q 4.5
GD
Turn-On Delay Time t 4.9
D(ON)
Turn-On Rise Time t 3.8 V = 40V, V = 10V,
R DD GS
ns
Turn-Off Delay Time 16.5
t I = 12A, R = 1.6
D(OFF) D G
Turn-Off Fall Time 3.5
t
F
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz. copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz. copper, with 1-inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
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DMT8012LSS May 2016
Diodes Incorporated
www.diodes.com
Document number: DS38164 Rev. 3 - 2