Green DMTH10H010LPS 100V +175C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features Rated to +175C Ideal for High Ambient Temperature I D BV R Max DSS DS(ON) Environments T = +25C C Thermally Efficient Package-Cooler Running Applications 100V 98.4A 8.6m VGS = 10V High Conversion Efficiency Low R Minimizes On-State Losses DS(ON) Low Input Capacitance Fast Switching Speed Description <1.1mm Package Profile Ideal for Thin Applications This new generation N-Channel Enhancement Mode MOSFET is Lead-Free Finish RoHS Compliant (Notes 1 & 2) designed to minimize R , yet maintain superior switching DS(ON) Halogen and Antimony Free. Green Device (Note 3) performance. This device is ideal for use in notebook battery power Qualified to AEC-Q101 Standards for High Reliability management and load switch. Mechanical Data Applications Case: PowerDI 5060-8 Motor Control Case Material: Molded Plastic, Green Molding Compound. DC-DC Converters UL Flammability Classification Rating 94V-0 Power Management Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Below Terminal Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.097 grams (Approximate) PowerDI5060-8 D S D Pin1 S D S D G D G S Top View Top View Bottom View Internal Schematic Pin Configuration Ordering Information (Note 4) Part Number Case Packaging DMTH10H010LPS-13 PowerDI5060-8 2,500 / Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMTH10H010LPS Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage 100 V V DSS Gate-Source Voltage 20 V V GSS Steady T = +25C 10.8 A I A D State 7.6 T = +100C A Continuous Drain Current (V = 10V) GS T = +25C Steady C 98.4 A I D State 69.6 T = +100C C Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 250 A I DM Maximum Continuous Body Diode Forward Current 95 A I S Pulsed Body Diode Forward Current (10s Pulse, Duty Cycle = 1%) I 250 A SM Avalanche Current, L=0.3mH I 15 A AS Avalanche Energy, L=0.3mH E 33.7 mJ AS Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) P 1.5 W D Steady State 99 Thermal Resistance, Junction to Ambient (Note 5) R C/W JA 125 Total Power Dissipation W TC = +25C PD Thermal Resistance, Junction to Case 1.2 C/W R JC Operating and Storage Temperature Range -55 to +175 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage 100 V BV V = 0V, I = 1mA DSS GS D Zero Gate Voltage Drain Current 1 A I V = 80V, V = 0V DSS DS GS Gate-Source Leakage 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 6) Gate Threshold Voltage 1.4 1.9 3 V V V = V , I = 250A GS(TH) DS GS D 6.9 8.6 V = 10V, I = 13A GS D Static Drain-Source On-Resistance R 7.5 12 m V = 6V, I = 13A DS(ON) GS D 10 20 V = 4.5V, I = 5A GS D Diode Forward Voltage V 0.8 1.3 V V = 0V, I = 13A SD GS S DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance C 2592 iss V = 50V, V = 0V DS GS 792 Output Capacitance C pF oss f = 1MHz Reverse Transfer Capacitance 45 C rss Gate Resistance 2 R V = 0V, V = 0V, f = 1MHz g DS GS Total Gate Charge 53.7 Q g V = 50V, I = 13A, DD D Gate-Source Charge 10.6 nC Q gs V = 10V GS 8.2 Gate-Drain Charge Q gd 11.6 Turn-On Delay Time t D(ON) 14.1 Turn-On Rise Time t R V = 50V, V = 10V, DD GS ns 42.9 Turn-Off Delay Time t I = 13A, R = 6 D(OFF) D g 22 Turn-Off Fall Time t F 49.8 Reverse Recovery Time t ns RR I = 13A, di/dt = 100A/s F Reverse Recovery Charge 85.1 nC Q RR Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. 2 of 7 DMTH10H010LPS August 2017 Diodes Incorporated www.diodes.com Document number: DS39907 Rev. 3 - 2