Green DMTH10H025LK3Q 100V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features I D Rated to +175C Ideal for High Ambient Temperature BV R Max DSS DS(ON) T = +25C C Environments 51.7A 22m V = 10V GS 100% Unclamped Inductive Switching Ensures More Reliable 100V 44.3A and Robust End Application 30m V = 6V GS Low R Minimizes Power Losses DS(ON) 36.7A 43.7m V = 4.5V GS Low Q Minimizes Switching Losses G Lead-Free Finish RoHS Compliant (Notes 1 & 2) Description Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability This MOSFET is designed to meet the stringent requirements of PPAP Capable (Note 4) automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: Mechanical Data Power Management Functions DC-DC Converters Case: TO252 (DPAK) Backlighting Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.33 grams (Approximate) Equivalent Circuit Top View Pin Out Top View Ordering Information (Note 5) Part Number Case Packaging DMTH10H025LK3Q-13 TO252 (DPAK) 2,500/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 2. See DMTH10H025LK3Q Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 100 V DSS Gate-Source Voltage V 20 V GSS T = +25C 51.7 C A Continuous Drain Current, V = 10V (Note 7) I GS D 36.6 T = +100C C Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 95 A I DM Maximum Continuous Body Diode Forward Current (Note 7) 77 A I S Pulsed Body Diode Forward Current (10s Pulse, Duty Cycle = 1%) 95 A I SM Avalanche Current, L = 0.1mH I 15.8 A AS Avalanche Energy, L = 0.1mH E 12.5 mJ AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 6) 3.1 W P D Thermal Resistance, Junction to Ambient (Note 6) Steady State 48 C/W R JA Total Power Dissipation (Note 7) 100 W P D Thermal Resistance, Junction to Case (Note 7) R 1.5 C/W JC Operating and Storage Temperature Range T T -55 to +175 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV 100 V V = 0V, I = 1mA DSS GS D Zero Gate Voltage Drain Current 1 A I V = 80V, V = 0V DSS DS GS Gate-Source Leakage 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage 1 3 V V V = V , I = 250A GS(TH) DS GS D 17.1 22 V = 10V, I = 20A GS D Static Drain-Source On-Resistance R 21.4 30 m V = 6V, I = 20A DS(ON) GS D 28.3 43.7 V = 4.5V, I = 20A GS D Diode Forward Voltage V 1.3 V V = 0V, I = 20A SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance C 1477 iss V = 50V, V = 0V DS GS 263 Output Capacitance C pF oss f = 1MHz Reverse Transfer Capacitance C 20 rss Gate Resistance 1.3 R V = 0V, V = 0V, f = 1MHz G DS GS Total Gate Charge 21 Q G V = 50V, I = 20A, DD D Gate-Source Charge 5.7 nC Q GS V = 10V GS Gate-Drain Charge 3.8 Q GD Turn-On Delay Time 6.3 t D(ON) Turn-On Rise Time t 9.4 V = 50V, V = 10V, R DD GS ns 16.7 Turn-Off Delay Time t I = 20A, R = 6 D(OFF) D G Turn-Off Fall Time t 8.2 F 38.7 Reverse Recovery Time t ns RR I = 20A, di/dt = 100A/s F Reverse Recovery Charge Q 53.7 nC RR Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate. 7. Thermal resistance from junction to soldering point (on the exposed drain pad). 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2 of 7 DMTH10H025LK3Q May 2018 Diodes Incorporated www.diodes.com Document number: DS40359 Rev. 3 - 2