DMTH32M5LPSQ Green 30V 175C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features Rated to +175C Ideal for High Ambient Temperature Environments I D BV R DSS DS(ON) T = +25C 100% Unclamped Inductive Switching (Test in Production) C Ensures More Reliable and Robust End Application 2.2m V = 10V GS 170A 30V <1.1mm Package Profile Ideal for Thin Applications 3.2m V = 4.5V 140A GS High Conversion Efficiency Low R Minimizes On State Losses DS(ON) Low Input Capacitance Lead-Free Finish RoHS Compliant (Notes 1 & 2) Description and Applications Halogen and Antimony Free. Green Device (Note 3) This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a Qualified to AEC-Q101 Standards for High Reliability PPAP and is ideal for use in: PPAP Capable (Note 4) Mechanical Data Engine Management Systems Body Control Electronics Case: PowerDI 5060-8 DC-DC Converters Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Below Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.097 grams (Approximate) PowerDI5060-8 S D Pin1 S D D S G D Top View Top View Bottom View Internal Schematic Pin Configuration Ordering Information (Note 4) Part Number Case Packaging DMTH32M5LPSQ-13 PowerDI5060-8 2,500 / Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 2. See DMTH32M5LPSQ Maximum Ratings ( T = +25C, unless otherwise specified.) C Characteristic Symbol Value Unit Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 16 V GSS Steady T = +25C 170 C Continuous Drain Current, V = 10V (Note 7) I A GS D State 120 T = +100C C Maximum Continuous Body Diode Forward Current (Note 7) 80 A I S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 350 A I DM Pulsed Body Diode Forward Current (10s Pulse, Duty Cycle = 1%) 350 A I SM Avalanche Current, L = 0.1mH 50 A I AS Avalanche Energy, L = 0.1mH E 140 mJ AS Thermal Characteristics ( T = +25C, unless otherwise specified.) C Characteristic Symbol Value Unit Total Power Dissipation (Note 6) 3.2 W T = +25C P A D Thermal Resistance, Junction to Ambient (Note 6) R 54 C/W JA Total Power Dissipation (Note 7) T = +25C P 100 W C D Thermal Resistance, Junction to Case (Note 7) 1.5 C/W R JC Operating and Storage Temperature Range T T -55 to +175 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) C Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage 30 V BV V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current 1 A I V = 24V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 16V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V 1 3 V V = V , I = 1mA GS(TH) DS GS D 1.6 2.2 V = 10V, I = 30A GS D Static Drain-Source On-Resistance m R DS(ON) 2.6 3.2 V = 4.5V, I = 30A GS D Diode Forward Voltage V 0.8 1.1 V V = 0V, I = 30A SD GS S DYNAMIC CHARACTERISTICS (Note 9) 3944 Input Capacitance C iss V = 25V, V = 0V, DS GS 1267 Output Capacitance pF Coss f = 1MHz Reverse Transfer Capacitance 186 C rss Gate Resistance 0.6 R V = 0V, V = 0V, f = 1MHz g DS GS 34 Total Gate Charge (V = 4.5V) Q GS g 68 Total Gate Charge (V = 10V) Q GS g nC V = 15V, I = 20A DS D Gate-Source Charge Q 8 gs Gate-Drain Charge Q 15 gd Turn-On Delay Time t 7.2 D(ON) Turn-On Rise Time t 13.2 R V = 15V, V = 10V, DD GS ns Turn-Off Delay Time 37.5 I = 15A, R = 3 tD(OFF) D g Turn-Off Fall Time 23.9 t F Body Diode Reverse Recovery Time 28.7 ns t RR I = 15A, di/dt = 500A/s S Body Diode Reverse Recovery Charge 45.8 nC Q RR Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 7. Thermal resistance from junction to soldering point (on the exposed drain pad). 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to production testing. 2 of 7 DMTH32M5LPSQ April 2018 Diodes Incorporated www.diodes.com Document number: DS40687 Rev. 3 - 2