DMTH4004LK3Q
Green
40V 175C N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary Features
I Max
D Rated to +175C Ideal for High Ambient Temperature
BV R Max Q Typ
DSS DS(ON) g T = +25C
C
Environments
(Note 10)
100% Unclamped Inductive Switching Ensures More Reliable
3m @ V = 10V 83nC 100A
GS
40V
and Robust End Application
5m @ V = 4.5V 35nC 100A
GS
Low R Minimizes Power Losses
DS(ON)
Low Q Minimizes Switching Losses
g
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. Green Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Description and Applications
This MOSFET is designed to meet the stringent requirements of Case: TO252
Automotive applications. It is qualified to AEC-Q101, supported by a
Case Material: Molded Plastic, Green Molding Compound.
PPAP and is ideal for use in:
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Engine Management Systems
Terminal Finish - Matte Tin Annealed over Copper Leadframe;
Body Control Electronics
Solderable per MIL-STD-202, Method 208
DC-DC Converters
Weight: 0.33 grams (Approximate)
Motor Control
Pin Out Top View
Equivalent Circuit
Top View
Ordering Information (Note 5)
Part Number Case Packaging
DMTH4004LK3Q-13 TO252 2,500/Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See
DMTH4004LK3Q
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage V 40 V
DSS
Gate-Source Voltage V 20 V
GSS
T = +25C
C
100
(Note 10) A
Continuous Drain Current (Note 7) V = 10V I
GS D
T = +100C
C 100
Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 200 A
I
DM
Maximum Continuous Body Diode Forward Current (Note 7) I 100 A
S
Avalanche Current, L = 0.2mH I 30 A
AS
Avalanche Energy, L = 0.2mH E 90 mJ
AS
Thermal Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Total Power Dissipation (Note 6) 3.9 W
T = +25C P
A D
Thermal Resistance, Junction to Ambient (Note 6) R 38 C/W
JA
Total Power Dissipation (Note 7) 180 W
TC = +25C PD
Thermal Resistance, Junction to Case (Note 7) 0.8 C/W
R
JC
Operating and Storage Temperature Range T T -55 to +175 C
J, STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage 40 V
BV V = 0V, I = 250A
DSS GS D
1 A
Zero Gate Voltage Drain Current, T = +25C I V = 32V, V = 0V
J DSS DS GS
Gate-Source Leakage 100 nA
I V = 20V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage 1 3 V
V V = V , I = 250A
GS(TH) DS GS D
2.4 3 m
V = 10V, I = 50A
GS D
Static Drain-Source On-Resistance R
DS(ON)
4 5 m
V = 4.5V, I = 50A
GS D
Diode Forward Voltage V 0.7 1.2 V V = 0V, I = 50A
SD GS S
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance C 4,450 pF
iss
V = 25V, V = 0V,
DS GS
Output Capacitance C 1,407 pF
oss
f = 1MHz
Reverse Transfer Capacitance C 74 pF
rss
Gate Resistance R 0.7 V = 0V, V = 0V, f = 1MHz
g DS GS
nC
Total Gate Charge (VGS = 4.5V) Qg 35
nC
Total Gate Charge (V = 10V) Q 83
GS g
V = 20V, I = 30A
DS D
Gate-Source Charge nC
Q 10
gs
Gate-Drain Charge nC
Q 11.2
gd
Turn-On Delay Time ns
t 5.9
D(ON)
Turn-On Rise Time ns
t 13.2 V = 10V, V = 20V,
R GS DS
Turn-Off Delay Time t 25.8 ns R = 1.6, I = 30A
D(OFF) G D
Turn-Off Fall Time t 7.9 ns
F
Body Diode Reverse Recovery Time t ns I = 50A, di/dt = 100A/s
RR 48 F
Body Diode Reverse Recovery Charge Q nC I = 50A, di/dt = 100A/s
RR F
72
Notes: 6. Device mounted with exposed drain pad on 25mm by 25mm 2oz copper on a single- sided 1.6mm FR-4 PCB; device is measured under still air conditions
while operating in a steady state.
7. Thermal resistance from junction to solder point (on the exposed drain pin).
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
10. Package Limited.
2 of 7
DMTH4004LK3Q February 2016
Diodes Incorporated
www.diodes.com
Document number: DS37791 Rev. 2 - 2