DMTH4004LPS
Green
40V 175C N-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI
Product Summary Features
I Rated to +175C ideal for high ambient temperature
D
BV R Max
DSS DS(ON)
T = +25C
C
environments
100% Unclamped Inductive Switching ensures more reliable
100A
2.5m @ VGS = 10V
and robust end application
40V
Low R minimizes power losses
DS(ON)
4m @ V = 4.5V 100A
GS
Low Qg minimizes switching losses
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. Green Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This MOSFET is designed to minimize the on-state resistance
Mechanical Data
(R ) and yet maintain superior switching performance, making it
DS(ON)
Case: POWERDI 5060-8
ideal for high efficiency power management applications.
Case Material: Molded Plastic, Green Molding Compound. UL
Flammability Classification Rating 94V-0
Engine Management Systems
Moisture Sensitivity: Level 1 per J-STD-020
Body Control Electronics
DC-DC Converters Terminal Finish - Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.097 grams (Approximate)
POWERDI 5060-8
S D
Pin1
S
D
S D
D
G
Top View Top View
Bottom View Internal Schematic
Pin Configuration
Ordering Information (Note 4)
Part Number Case Packaging
DMTH4004LPS-13 POWERDI 5060-8 2,500 / Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See
DMTH4004LPS
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage V 40 V
DSS
Gate-Source Voltage V 20 V
GSS
T = +25C 26
A
Continuous Drain Current (Note 5) I A
D
21
T = +70C
A
100
T = +25C
C
Continuous Drain Current (Note 6) A
I
T = +70C D
C
100
(Note 8)
Maximum Continuous Body Diode Forward Current (Note 6) I 70 A
S
Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 100 A
DM
33.3
Avalanche Current, L=0.2mH I A
AS
110
Avalanche Energy, L=0.2mH E mJ
AS
Thermal Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Total Power Dissipation (Note 5) 2.6 W
T = +25C P
A D
Thermal Resistance, Junction to Ambient (Note 5) R 47 C/W
JA
Total Power Dissipation (Note 6) T = +25C P 138 W
C D
Thermal Resistance, Junction to Case (Note 6) R 0.9 C/W
JC
Operating and Storage Temperature Range T T -55 to +175 C
J, STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage 40 V
BV V = 0V, I = 1mA
DSS GS D
Zero Gate Voltage Drain Current 1 A
I V = 32V, V = 0V
DSS DS GS
Gate-Source Leakage 100 nA
I V = 20V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage 1 3 V
V V = V , I = 250A
GS(TH) DS GS D
2.5 V = 10V, I = 50A
GS D
Static Drain-Source On-Resistance m
R
DS(ON)
4 V = 4.5V, I = 50A
GS D
Diode Forward Voltage V 0.9 1.2 V V = 0V, I = 50A
SD GS S
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance C 4508
iss
V = 20V, V = 0V,
DS GS
1648
Output Capacitance C pF
oss
f = 1MHz
104
Reverse Transfer Capacitance
Crss
Gate Resistance 0.7
R V = 0V, V = 0V, f = 1MHz
g DS GS
34.6 nC
Total Gate Charge (V = 4.5V) Q
GS g
82.2
Total Gate Charge (V = 10V) Q
GS g
V = 20V, I = 30A
DD D
Gate-Source Charge 9.9 nC
Q
gs
11.2
Gate-Drain Charge Q
gd
5.9
Turn-On Delay Time t
D(ON)
13.3
Turn-On Rise Time t
R V = 20V, V = 10V,
DD GS
ns
25.9
Turn-Off Delay Time t I = 30A, R = 1.6
D(OFF) D G
7.9
Turn-Off Fall Time
tF
48.4
Body Diode Reverse Recovery Time ns
t
RR
I = 50A, di/dt = 100A/s
F
Body Diode Reverse Recovery Charge 72.4 nC
Q
RR
Notes: 5. Device mounted with exposed drain pad on 25mm by 25mm 2oz copper on a single- sided 1.6mm FR-4 PCB; device is measured under still air conditions
whilst operating in a steady state.
6. Thermal resistance from junction to soldering point (on the exposed drain pad).
7 .Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
POWERDI is a registered trademark of Diodes Incorporated.
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DMTH4004LPS October 2015
Diodes Incorporated
www.diodes.com
Document number: DS37767 Rev.2 - 2
NEW PRODUCT