DMTH4007SPD
40V 175C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary Features and Benefits
Rated to +175C Ideal for High Ambient Temperature
I max
D
Environments
BV R max T = +25C
DSS DS(ON) C
High Conversion Efficiency
(Note 9)
Low R Minimizes On State Losses
DS(ON)
40V 45A
8.6m @ V = 10V
GS
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. Green Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications Mechanical Data
Case: PowerDI5060-8
This MOSFET is designed to minimize the on-state resistance
Case Material: Molded Plastic,Gree Molding Compound.
(R ) and yet maintain superior switching performance, making it
DS(ON)
UL Flammability Classification Rating 94V-0
ideal for high-efficiency power management applications.
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Backlighting
Solderable per MIL-STD-202, Method 208
Power Management Functions
Weight: 0.097 grams (Approximate)
DC-DC Converters
S1
D1
D1 D2
G1
D1
S2 D2
G1 G2
D2
G2
S1 S2
Pin1
Pin Out
Equivalent Circuit
Top View
Bottom View
Top View
Ordering Information (Note 4)
Part Number Case Packaging
DMTH4007SPD-13 2,500/Tape & Reel
PowerDI5060-8
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
DMTH4007SPD
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage V 40 V
DSS
Gate-Source Voltage V 20 V
GSS
TC = +25C
45
Continuous Drain Current (Note 6) (Note 9) I A
D
T = +100C 38.1
C
T = +25C 14.2
A
Continuous Drain Current (Note 5) A
I
D
11.9
T = +70C
A
Pulsed Drain Current (10s pulse, duty cycle = 1%) 90 A
IDM
Maximum Continuous Body Diode Forward Current (Note 6) 34 A
I
S
Avalanche Current, L = 0.1mH 20 A
I
AS
Avalanche Energy, L = 0.1mH 89 mJ
E
AS
Thermal Characteristics
Characteristic Symbol Value Unit
Total Power Dissipation (Note 5) 2.6 W
T = +25C P
A D
Thermal Resistance, Junction to Ambient (Note 5) 57 C/W
R
JA
Total Power Dissipation (Note 6) 37.5 W
T = +25C P
C D
Thermal Resistance, Junction to Case (Note 6) 4 C/W
R
JC
Operating and Storage Temperature Range T T -55 to +175 C
J, STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage BV 40 V V = 0V, I = 1mA
DSS GS D
Zero Gate Voltage Drain Current I 1 A V = 32V, V = 0V
DSS DS GS
Gate-Source Leakage 100 nA
I V = 20V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage 2 4 V
V V = V , I = 250A
GS(th) DS GS D
Static Drain-Source On-Resistance 7.5 8.6 m
R V = 10V, I = 17A
DS(ON) GS D
Diode Forward Voltage 0.85 V
V V = 0V, I = 17A
SD GS S
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance 2,026 pF
C
iss
V = 30V, V = 0V,
DS GS
702
Output Capacitance C pF
oss
f = 1MHz
84.8
Reverse Transfer Capacitance C pF
rss
0.46
Gate Resistance R V = 0V, V = 0V, f = 1MHz
g DS GS
41.9
Total Gate Charge Q nC
g
10
Gate-Source Charge Q nC V = 30V, I = 20A, V = 10V
gs DS D GS
11.5
Gate-Drain Charge nC
Qgd
Turn-On Delay Time 7 ns
t
D(on)
Turn-On Rise Time 11.5 ns
t V = 30V, V = 10V,
r DD GS
Turn-Off Delay Time 15.6 ns I = 20A, R = 3
t D G
D(off)
Turn-Off Fall Time 8.8 ns
t
f
Body Diode Reverse Recovery Time t 29.9 nS
rr
I = 20A, di/dt = 100A/s
F
Body Diode Reverse Recovery Charge Q 23 nC
rr
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz. copper, with thermal bias to bottom layer 1inch square copper plate.
6. Thermal resistance from junction to soldering point (on the exposed drain pad).
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
9. Package limited.
2 of 7
DMTH4007SPD November 2015
Diodes Incorporated
www.diodes.com
Document number: DS37359 Rev. 3 - 2
ADVANCE INFORMATION
ADVANCED INFORMATION