Green DMTH4007SPS
40V 175C N-CHANNEL ENHANCEMENT MODE MOSFET
PowerDI5060-8
Product Summary Features
I Max Rated to +175C Ideal for High Ambient Temperature
D
BV R Max T = +25C
DSS DS(ON) C Environments
(Note 9)
Thermally Efficient Package-Cooler Running Applications
40V 7.6m @ V = 10V 100A
GS
High Conversion Efficiency
Low R Minimizes On State Losses
DS(ON)
Low Input Capacitance
Description
Fast Switching Speed
This new generation N-Channel Enhancement Mode MOSFET is <1.1mm Package Profile Ideal for Thin Applications
designed to minimize R , yet maintain superior switching Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
DS(ON)
performance. This device is ideal for use in notebook battery power Halogen and Antimony Free. Green Device (Note 3)
management and loadswitch. Qualified to AEC-Q101 Standards for High Reliability
An Automotive-Compliant Part is Available Under Separate
Datasheet (DMTH4007SPSQ)
Applications
Mechanical Data
Power Management
DC-DC Converters Case: PowerDI 5060-8
Motor Control Case Material: Molded Plastic, Green Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.097 grams (Approximate)
PowerDI5060-8
S D
Pin1
S
D
S D
D
G
Top View
Top View Bottom View Internal Schematic
Pin Configuration
Ordering Information (Note 4)
Part Number Case Packaging
DMTH4007SPS-13 PowerDI5060-8 2,500 / Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See
DMTH4007SPS
Marking Information
D D D D
= Manufacturers Marking
H4007SS = Product Type Marking Code
YYWW = Date Code Marking
H4007SS
YY = Last Two Digits of Year (ex: 17 = 2017)
WW = Week Code (01 to 53)
YY WW
S S S G
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage V 40 V
DSS
Gate-Source Voltage V 20 V
GSS
T = +25C
A 15.7
Continuous Drain Current (Note 5) A
I
D
13.1
T = +70C
A
T = +25C
C
100
Continuous Drain Current (Note 6) (Note 9) A
I
D
T = +100C 77
C
Maximum Continuous Body Diode Forward Current (Note 6) 100 A
I
S
Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 200 A
I
DM
Avalanche Current, L=0.3mH 20 A
I
AS
Avalanche Energy, L=0.3mH 60 mJ
E
AS
Thermal Characteristics
Characteristic Symbol Value Unit
Total Power Dissipation (Note 5) 2.8 W
T = +25C P
A D
Thermal Resistance, Junction to Ambient (Note 5) 53 C/W
R
JA
Total Power Dissipation (Note 6) 136 W
T = +25C P
C D
Thermal Resistance, Junction to Case (Note 6) R 1.1 C/W
JC
Operating and Storage Temperature Range T T -55 to +175 C
J, STG
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate.
6. Thermal resistance from junction to soldering point (on the exposed drain pad).
2 of 8
DMTH4007SPS September 2017
Diodes Incorporated
www.diodes.com
Document number: DS37358 Rev. 5 - 2