DMTH4008LFDFWQ 40V +175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175C Ideal for High Ambient Temperature I Max D BV R Max DSS DS(ON) Environments T = +25C A 100% Unclamped Inductive Switching Ensures More Reliable 11.5m V = 10V 11.6A GS and Robust End Application 40V 18m V = 4.5V 9.3A GS Low R Ensures On State Losses Are Minimized DS(ON) 0.6mm Profile Ideal for Low Profile Applications 2 PCB Footprint of 4mm Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description Qualified to AEC-Q101 Standards for High Reliability This MOSFET is designed to meet the stringent requirements of PPAP Capable (Note 4) automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: Mechanical Data Power Management Functions Case: U-DFN2020-6 (SWP) (Type F) DC-DC Converters Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Backlighting Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin Annealed over Copper Leadframe Solderable per MIL-STD-202, Method 208 Weight: 0.0065 grams (Approximate) U-DFN2020-6 (SWP) (Type F) D e4e4 G S Pin Out Internal Schematic Top View Bottom View Bottom View Ordering Information (Note 5) Part Number Case Quantity Per Reel DMTH4008LFDFWQ-7 U-DFN2020-6 (SWP) (Type F) 3,000 DMTH4008LFDFWQ-13 U-DFN2020-6 (SWP) (Type F) 10,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DMTH4008LFDFWQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 40 V DSS Gate-Source Voltage V 20 V GSS T = +25C 11.6 A Continuous Drain Current (Note 7) V = 10V I A GS D 8.2 T = +100C A Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 80 A I DM Continuous Source-Drain Diode Current (Note 7) 2.55 A I S Pulsed Source-Drain Diode Current (10s Pulse, Duty Cycle = 1%) 80 A I SM Avalanche Current, L = 0.3mH (Note 8) I 14.7 A AS Avalanche Energy, L = 0.3mH (Note 8) E 32.4 mJ AS Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 6) T = +25C P 0.99 W A D Thermal Resistance, Junction to Ambient (Note 6) Steady State 153 C/W R JA Total Power Dissipation (Note 7) 2.35 W T = +25C P A D Thermal Resistance, Junction to Ambient (Note 7) Steady State 64.5 C/W R JA Thermal Resistance, Junction to Case (Note 7) 14.8 C/W T = +25C R C JC Operating and Storage Temperature Range -55 to +175 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage BV 40 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current I 1 A V = 32V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 9) Gate Threshold Voltage V 1 1.7 3 V V = V , I = 250A GS(TH) DS GS D 9.1 11.5 V = 10V, I = 10A GS D Static Drain-Source On-Resistance m R DS(ON) 12.9 18 V = 4.5V, I = 8.5A GS D Diode Forward Voltage 0.8 1.0 V V V = 0V, I = 10A SD GS S DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance 1030 C iss V = 20V, V = 0V, DS GS Output Capacitance 324 pF C oss f = 1MHz Reverse Transfer Capacitance 27 C rss Gate Resistance R 1.82 V = 0V, V = 0V, f = 1MHz g DS GS Total Gate Charge (V = 4.5V) Q 6.8 GS g 14.2 Total Gate Charge (V = 10V) Q GS g nC V = 20V, I = 10A DD D 2.0 Gate-Source Charge Q gs 2.7 Gate-Drain Charge Q gd Turn-On Delay Time t 3.1 D(ON) Turn-On Rise Time 3.1 t V = 20V, V = 10V, R DD GS ns Turn-Off Delay Time 14.2 R = 6, I = 10A t g D D(OFF) Turn-Off Fall Time 5.8 t F Reverse Recovery Time 19.6 ns t RR I = 10A, di/dt = 100A/s F Reverse Recovery Charge 8.2 nC Q RR Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 8. I and E ratings are based on low frequency and duty cycles to keep T =+ 25C. AS AS J 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. 2 of 7 January 2018 DMTH4008LFDFWQ www.diodes.com Diodes Incorporated Datasheet number: DS39771 Rev. 3 - 2 ADVANCED INFORMATION