DMTH4008LPS Green 40V 175C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features I Max Rated to +175C Ideal for High Ambient Temperature D BV R Max DSS DS(ON) T = +25C Environments C 8.8m V = 10V 64.8A 100% Unclamped Inductive Switching, Test in Production GS 40V 13m V = 5V 53.3A Ensures More Reliable And Robust End Application GS Low R Minimizes On-State Losses DS(ON) Low Input Capacitance Fast Switching Speed Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability An Automotive-Compliant Part is Available Under Separate Data Sheet (DMTH4008LPSQ) Description and Applications Mechanical Data Case: PowerDI 5060-8 This MOSFET is designed to minimize the on-state resistance Case Material: Molded Plastic, Green Molding Compound. (R ), yet maintain superior switching performance, making it DS(ON) UL Flammability Classification Rating 94V-0 ideal for high efficiency power management applications. Moisture Sensitivity: Level 1 per J-STD-020 Terminal Finish - Matte Tin Annealed over Copper Leadframe. BLDC Motors Solderable per MIL-STD-202, Method 208 DC-DC Converters Weight: 0.097 grams (Approximate) Load Switch PowerDI5060-8 S D Pin1 S D S D D G Top View Top View Bottom View Internal Schematic Pin Configuration Ordering Information (Note 4) Part Number Case Packaging DMTH4008LPS-13 PowerDI5060-8 2,500/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 2. See DMTH4008LPS Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 40 V DSS Gate-Source Voltage V 20 V GSS T = +25C 14.4 A Continuous Drain Current, V = 10V (Note 5) I A GS D 10.2 T = +100C A T = +25C 64.8 C A Continuous Drain Current, V = 10V (Note 6) I GS D 45.8 T = +100C C Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 110 A DM 55.5 Maximum Continuous Body Diode Forward Current (Note 6) I A S Avalanche Current, L = 0.1mH I 22.7 A AS Avalanche Energy, L = 0.1mH E 25.7 mJ AS Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 2.99 W T = +25C P A D Thermal Resistance, Junction to Ambient (Note 5) R 50.4 C/W JA Total Power Dissipation (Note 6) T = +25C P 55.5 W C D Thermal Resistance, Junction to Case (Note 6) R 2.7 C/W JC Operating and Storage Temperature Range T T -55 to +175 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 40 V BV V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current 1 A I V = 32V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 1 1.6 3 V V = V , I = 250A GS(TH) DS GS D 7.3 8.8 V = 10V, I = 10A GS D Static Drain-Source On-Resistance m R DS(ON) 10 13 V = 5V, I = 10A GS D Diode Forward Voltage V 0.8 1.0 V V = 0V, I = 10A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C 1,088 iss V = 20V, V = 0V, DS GS 322 Output Capacitance pF C oss f = 1MHz Reverse Transfer Capacitance 27 C rss Gate Resistance 2.6 R V = 0V, V = 0V, f = 1MHz g DS GS 7.4 Total Gate Charge (V = 4.5V) Q GS g 15.3 Total Gate Charge (V = 10V) Q GS g nC VDS = 20V, ID = 10A 2.4 Gate-Source Charge Q gs 3.4 Gate-Drain Charge Q gd Turn-On Delay Time t 4.3 D(ON) 7.5 Turn-On Rise Time t R V = 20V, V = 10V, DD GS ns 16.7 Turn-Off Delay Time t I = 10A, R = 6 D(OFF) D G Turn-Off Fall Time 5.8 t F Body Diode Reverse Recovery Time 20.2 ns t RR I = 10A, di/dt = 100A/s F Body Diode Reverse Recovery Charge 8.9 nC Q RR Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate. 6. Thermal resistance from junction to soldering point (on the exposed drain pad). 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 7 DMTH4008LPS April 2018 Diodes Incorporated www.diodes.com Document number: DS40425 Rev. 2 - 2