DMTH4011SPD 40V 175C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Rated to +175C Ideal for High Ambient Temperature Environments I max D BV R max DSS DS(ON) 100% Unclamped Inductive Switching Ensures More Reliable T = +25C C and Robust End Application 40V 42A 15m V = 10V GS High Conversion Efficiency Low R Minimizes On State Losses DS(ON) Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Description and Applications Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability This MOSFET is designed to minimize the on-state resistance An Automotive-Compliant Part is Available Under Separate (R ) and yet maintain superior switching performance, making it DS(ON) Datasheet (DMTH4011SPDQ) ideal for high efficiency power management applications. Backlighting Mechanical Data Power Management Functions Case: PowerDI 5060-8 (Type C) DC-DC Converters Case Material: Molded Plastic,Gree Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.097 grams (Approximate) D1 D2 S1 D1 G1 D1 S2 D2 G1 G2 D2 G2 S1 S2 Pin1 Pin Out Top View Bottom View Equivalent Circuit Top View Ordering Information (Note 4) Part Number Case Packaging DMTH4011SPD-13 2,500/Tape & Reel PowerDI5060-8 (Type C) Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMTH4011SPD Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 40 V DSS Gate-Source Voltage V 20 V GSS T = +25C 42 C Continuous Drain Current (Note 6) A I D 29.7 T = +100C C T = +25C 11.1 A Continuous Drain Current (Note 5) I A D 7.8 T = +100C A Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 60 A DM Maximum Continuous Body Diode Forward Current (Note 6) I 3.3 A S Pulsed Body Diode Forward Current (10s Pulse, Duty Cycle = 1%) I 60 A SM Avalanche Current, L = 0.3mH I 11.9 A AS Avalanche Energy, L = 0.3mH 21.4 mJ E AS Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) T = +25C P 2.6 W A D Thermal Resistance, Junction to Ambient (Note 5) R 57 C/W JA Total Power Dissipation (Note 6) T = +25C P 37.5 W C D Thermal Resistance, Junction to Case (Note 6) 4 C/W R JC Operating and Storage Temperature Range -55 to +175 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 40 V V = 0V, I = 1mA DSS GS D Zero Gate Voltage Drain Current I 1 A V = 32V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 2 4 V V = V , I = 250A GS(TH) DS GS D 11.6 Static Drain-Source On-Resistance R 15 m V = 10V, I = 20A DS(ON) GS D Diode Forward Voltage 1.2 V VSD VGS = 0V, IS = 20A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 805 pF C iss V = 20V, V = 0V, DS GS Output Capacitance 208 pF C oss f = 1MHz Reverse Transfer Capacitance 15 pF C rss Gate Resistance 2.76 R V = 0V, V = 0V, f = 1MHz g DS GS Total Gate Charge nC Q 10.6 g V = 20V, I = 20A, DS D Gate-Source Charge Q 2.2 nC gs V = 10V GS Gate-Drain Charge Q 2.7 nC gd Turn-On Delay Time t 4.1 ns D(ON) Turn-On Rise Time t 3.8 ns R V = 20V, V = 10V, DD GS Turn-Off Delay Time ns R = 1.6, I = 20A t 8.6 G D D(OFF) Turn-Off Fall Time ns t 1.9 F Body Diode Reverse Recovery Time ns t 10.2 RR I = 15A, di/dt = 400A/s F Body Diode Reverse Recovery Charge nC Q 9.6 RR Notes: 5. Device mounted on FR-4 substrate PC board, 2oz. copper, with thermal bias to bottom layer 1inch square copper plate. 6. Thermal resistance from junction to soldering point (on the exposed drain pad). 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 7 DMTH4011SPD December 2017 Diodes Incorporated www.diodes.com Document number: DS40409 Rev. 1 - 2