Green DMTH43M8LK3 40V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175C Ideal for High Ambient Temperature I Max D BV R Max DSS DS(ON) Environments T = +25C C 100% Unclamped Inductive Switching Ensures More Reliable 3.6m V = 10V 100A GS and Robust End Application 40V 5.2m V = 5V 90A Low R Ensures On-State Losses are Minimized GS DS(ON) Excellent Q x R Product (FOM) GD DS(ON) Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability An Automotive-Compliant Part is Available Under Separate Datasheet (DMTH43M8LK3Q) Description and Applications Mechanical Data This new generation MOSFET is designed to minimize the on-state resistance (R ), yet maintain superior switching performance, DS(ON) Case: TO252 (DPAK) making it ideal for high efficiency power management applications. Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Power Management Functions Moisture Sensitivity: Level 1 per J-STD-020 DC-DC Converters Terminal Finish - Matte Tin Annealed over Copper Leadframe. Backlighting Solderable per MIL-STD-202, Method 208 Weight: 0.33 grams (Approximate) TO252 (DPAK) Equivalent Circuit Top View Pin Out Top View Ordering Information (Note 4) Part Number Case Packaging DMTH43M8LK3-13 TO252 (DPAK) 2,500/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMTH43M8LK3 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 40 V DSS Gate-Source Voltage 20 V V GSS T = +25C 17.6 A A Continuous Drain Current, V = 10V (Note 5) I GS D 12.5 T = +100C A T = +25C 100 C Continuous Drain Current, V = 10V (Note 6) I A GS D 80 T = +100C C Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 150 A I DM Maximum Continuous Body Diode Forward Current (Note 6) 70 A I S Pulsed Body Diode Forward Current (10s Pulse, Duty Cycle = 1%) 150 A I SM Avalanche Current, L=1mH 13.2 A I AS Avalanche Energy, L=1mH E 87 mJ AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 3.1 W PD Thermal Resistance, Junction to Ambient (Note 5) 47 C/W R JA Total Power Dissipation (Note 6) 88 W P D Thermal Resistance, Junction to Case (Note 6) 1.7 C/W R JC Operating and Storage Temperature Range -55 to +175 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 40 V V = 0V, I = 1mA DSS GS D Zero Gate Voltage Drain Current I 1 A V = 32V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 1 2.5 V V = V , I = 250A GS(TH) DS GS D Static Drain-Source On-Resistance 2.9 3.6 m R V = 10V, I = 20A DS(ON) GS D Static Drain-Source On-Resistance 4.3 5.2 m R V = 5V, I = 15A DS(ON) GS D Diode Forward Voltage 1.2 V V V = 0V, I = 20A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 2,693 C ISS V = 20V, V = 0V, DS GS Output Capacitance C 1,172 pF OSS f = 1MHz Reverse Transfer Capacitance C 52 RSS Gate Resistance R 2.54 V = 0V, V = 0V, f = 1MHz G DS GS Total Gate Charge (V = 10V) Q 38.5 nC GS G Total Gate Charge (V = 4.5V) Q 17.6 GS G V = 20V, I = 20A DS D Gate-Source Charge Q 6.9 nC GS Gate-Drain Charge 6.9 Q GD Turn-On Delay Time 5.2 t D(ON) Turn-On Rise Time 5.7 t V = 20V, V = 10V, R DD GS ns Turn-Off Delay Time 23.5 t ID = 20A, RG = 1.6 D(OFF) Turn-Off Fall Time t 11 F Body Diode Reverse Recovery Time t 35.4 ns RR I = 15A, di/dt = 100A/s F Body Diode Reverse Recovery Charge Q 32.9 nC RR Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate. 6. Thermal resistance from junction to soldering point (on the exposed drain pad). 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 7 DMTH43M8LK3 April 2017 Diodes Incorporated www.diodes.com Document number: DS38750 Rev. 2 - 2