DMTH6004SCT 60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features I Low Input Capacitance D BV R Max T = +25C DSS DS(ON) C Low Input/Output Leakage (Note 9) Lead-Free Finish RoHS Compliant (Notes 1 & 2) 60V 100A 3.65m V = 10V GS Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This new generation MOSFET features low on-resistance and fast Case: TO220-3 switching, making it ideal for high-efficiency power management Case Material: Molded Plastic, Green Molding Compound. applications. UL Flammability Classification Rating 94V-0 Terminals: Matte Tin Finish Annealed over Copper Leadframe. Engine Management Systems Solderable per MIL-STD-202, Method 208 Body Control Electronics Terminal Connections: See Diagram Below DC-DC Converters Weight: 1.85 grams (Approximate) TO220-3 Top View Top View Bottom View Equivalent Circuit Pin Out Configuration Ordering Information (Note 4) Part Number Case Packaging DMTH6004SCT TO220-3 50 Pieces/Tube Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMTH6004SCT Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 60 V DSS Gate-Source Voltage V 20 V GSS T = +25C C 100 (Note 9) Continuous Drain Current (Note 6) A I D T = +100C 100 C 100 Maximum Continuous Body Diode Forward Current (Note 6) T = +25C I A C S 180 Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I A DM 45 Avalanche Current, L=0.2mH I A AS 200 Avalanche Energy, L=0.2mH E mJ AS Thermal Characteristics Characteristic Symbol Value Units Total Power Dissipation (Note 5) 2.8 W T = +25C P A D Thermal Resistance, Junction to Ambient (Note 5) 52.8 C/W R JA Total Power Dissipation (Note 6) 136 W T = +25C P C D Thermal Resistance, Junction to Case (Note 6) 1.1 C/W R JC Operating and Storage Temperature Range T T -55 to +175 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 60 V V = 0V, I = 1mA DSS GS D Zero Gate Voltage Drain Current I 1 A V = 48V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 2 4 V V = V , I = 250A GS(TH) DS GS D Static Drain-Source On-Resistance R 3.1 3.65 m V = 10V, I =100A DS(ON) GS D Diode Forward Voltage 1.3 V V V = 0V, I = 100A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C 4,556 ISS V = 30V, V = 0V, DS GS Output Capacitance pF C 1,383 OSS f = 1MHz Reverse Transfer Capacitance 105 C RSS Gate Resistance 0.7 R V = 0V, V = 0V, f = 1MHz G DS GS Total Gate Charge 95.4 Q G V = 30V, I = 90A, DD D Gate-Source Charge 21.6 nC Q GS V = 10V GS Gate-Drain Charge 20.4 Q GD Turn-On Delay Time 14.3 t D(ON) Turn-On Rise Time 99.1 t V = 30V, V = 10V, R DD GS ns Turn-Off Delay Time 40 I = 90A, R = 3.5 t D G D(OFF) Turn-Off Fall Time 17.6 t F Reverse Recovery Time 50.5 ns tRR IF = 48A, di/dt = 100A/s Reverse Recovery Charge 80.8 nC QRR Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on infinite heat sink. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 9. Package limited. 2 of 7 February 2016 DMTH6004SCT www.diodes.com Diodes Incorporated Document number: DS38012 Rev. 2 - 2