DMTH6004SCTB Green 60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features I Rated to +175C Ideal for High Ambient Temperature D BV R Max T = +25C DSS DS(ON) C Environments (Note 9) 100% Unclamped Inductive Switching Ensures More Reliable 60V 100A 3.4m V = 10V and Robust End Application GS Low R Minimizes Power Losses DS(ON) Low Q Minimizes Switching Losses g Lead-Free Finish RoHS Compliant (Notes 1 & 2) Description Halogen and Antimony Free. Green Device (Note 3) This new generation MOSFET features low on-resistance and fast Qualified to AEC-Q101 Standards for High Reliability switching, making it ideal for high efficiency power management An Automotive-Compliant Part is Available Under Separate Datasheet (DMTH6004SCTBQ) applications. Mechanical Data Applications Engine Management Systems Case: TO263AB Case Material: Molded Plastic, Green Molding Compound. Body Control Electronics UL Flammability Classification Rating 94V-0 DC-DC Converters Moisture Sensitivity: Level 1 per J-STD-020 Terminal Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 1.7 grams (Approximate) TO263AB D D G S Internal Schematic Pin Out Top View Top View Ordering Information (Note 4) Part Number Case Packaging DMTH6004SCTB-13 TO263AB 800 / Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMTH6004SCTB Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage 60 V V DSS Gate-Source Voltage V V 20 GSS T = +25C C 100 (Note 9) Continuous Drain Current (Note 6) A I D 100 T = +100C C Maximum Continuous Body Diode Forward Current (Note 6) 100 A T = +25C I C S Pulsed Drain Current (10s Pulse, Duty Cycle=1%) 200 A I DM Avalanche Current, L=0.2mH 45 A I AS Avalanche Energy, L=0.2mH 200 mJ E AS Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 4.7 W T = +25C P A D Thermal Resistance, Junction to Ambient (Note 5) R 32 C/W JA Total Power Dissipation (Note 6) T = +25C P 136 W C D Thermal Resistance, Junction to Case (Note 6) R 1.1 C/W JC Operating and Storage Temperature Range T T -55 to +175 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 60 V V = 0V, I = 1mA DSS GS D Zero Gate Voltage Drain Current I 1 A V = 48V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage 2 4 V V V = V , I = 250A GS(TH) DS GS D Static Drain-Source On-Resistance 2.9 3.4 m R V = 10V, I =100A DS(ON) GS D Diode Forward Voltage 1.3 V V V = 0V, I = 100A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 4,556 C iss V = 30V, V = 0V DS GS Output Capacitance 1,383 pF C oss f = 1MHz Reverse Transfer Capacitance 105.2 C rss 0.66 Gate Resistance R V = 0V, V = 0V, f = 1MHz g DS GS 95.4 Total Gate Charge Q g V = 30V, I = 90A, DD D 21.6 Gate-Source Charge Q nC gs VGS = 10V 20.4 Gate-Drain Charge Q gd 13.2 Turn-On Delay Time t D(ON) Turn-On Rise Time 11.7 t V = 30V, V = 10V, R DD GS ns Turn-Off Delay Time 31 I =90A, R = 3.5 t D G D(OFF) Turn-Off Fall Time 12 t F Reverse Recovery Time 50.5 ns t RR I =50A, di/dt=100A/s F 80.8 Reverse Recovery Charge Q nC RR Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate. 6. Thermal resistance from junction to soldering point (on the exposed drain pad). 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 9. Package limited. 2 of 7 DMTH6004SCTB November 2015 Diodes Incorporated www.diodes.com Document number: DS37382 Rev. 5 - 2 NEW PRODUCT