Green DMTH6004SPSQ 60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features I D Rated to +175C Ideal for High Ambient Temperature BV R Max DSS DS(ON) T = +25C C Environments (Note 10) 100% Unclamped Inductive Switching Ensures More Reliable 60V 100A 3.1m V = 10V and Robust End Application GS Low R Minimizes Power Losses DS(ON) Low Q Minimizes Switching Losses g Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Mechanical Data Description and Applications Case: POWERDI 5060-8 This MOSFET is designed to meet the stringent requirements of Case Material: Molded Plastic, Green Molding Compound. automotive applications. It is qualified to AEC-Q101, supported by a UL Flammability Classification Rating 94V-0 PPAP and is ideal for use in: Moisture Sensitivity: Level 1 per J-STD-020 DC Motor Control Terminal Finish - Matte Tin Annealed over Copper Leadframe. Synchronous Rectification Solderable per MIL-STD-202, Method 208 DC-DC Converters Weight: 0.097 grams (Approximate) POWERDI 5060-8 S D Pin1 S D S D G D Top View Top View Bottom View Internal Schematic Pin Configuration Ordering Information (Note 5) Part Number Case Packaging DMTH6004SPSQ-13 POWERDI 5060-8 2,500 / Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMTH6004SPSQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 60 V DSS Gate-Source Voltage V 20 V GSS T = +25C 25 A Continuous Drain Current (Note 6) I A D 21 T = +70C A T = +25C C 100 (Note 10) Continuous Drain Current (Note 7) A I D 100 T = +100C C Maximum Continuous Body Diode Forward Current (Note 6) 100 A I S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 200 A I DM Avalanche Current, L=0.2mH 45 A I AS Avalanche Energy, L=0.2mH 200 mJ E AS Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 6) T = +25C P 2.1 W A D Thermal Resistance, Junction to Ambient (Note 6) 47 C/W R JA Total Power Dissipation (Note 7) 167 W T = +25C P C D Thermal Resistance, Junction to Case (Note 7) 0.9 C/W R JC Operating and Storage Temperature Range -55 to +175 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV 60 - - V V = 0V, I = 1mA DSS GS D - - 1 A V = 48V, V = 0V DS GS Zero Gate Voltage Drain Current I DSS (Note 9) - - 100 A V = 48V, V = 0V, T = +125C DS GS J Gate-Source Leakage - - 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage 2 - 4 V V V = V , I = 250A GS(TH) DS GS D Static Drain-Source On-Resistance - 2.5 3.1 m R V = 10V, I = 50A DS(ON) GS D Diode Forward Voltage - 0.9 1.2 V V V = 0V, I = 20A SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance - 4556 - C iss V = 30V, V = 0V, DS GS Output Capacitance - 1383 - pF C oss f = 1MHz Reverse Transfer Capacitance C - 105.2 - rss Gate Resistance R 0.1 0.66 1.9 V = 0V, V = 0V, f = 1MHz g DS GS Total Gate Charge Q - 95.4 - g V = 30V, I = 90A, DD D Gate-Source Charge Q - 21.6 - nC gs VGS = 10V Gate-Drain Charge Q - 20.4 - gd Turn-On Delay Time - 13.2 - t D(ON) Turn-On Rise Time - 11.7 - t V = 30V, V = 10V, R DD GS ns Turn-Off Delay Time - 31 - I = 90A, R = 3.5 t D G D(OFF) Turn-Off Fall Time - 12 - t F Body Diode Reverse Recovery Time - 50.5 - ns t RR I = 50A, di/dt = 100A/s F Body Diode Reverse Recovery Charge nC Q - 80.8 - RR Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 7. Thermal resistance from junction to soldering point (on the exposed drain pad). 8 .Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 10. Package limited. POWERDI is a registered trademark of Diodes Incorporated. 2 of 7 DMTH6004SPSQ December 2015 Diodes Incorporated www.diodes.com Document number: DS37561 Rev. 2 - 2