Green DMTH6005LPSQ 60V +175C N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features Rated to +175C Ideal for High Ambient Temperature I D Environments BV R max DSS DS(ON) T = +25C C 100% Unclamped Inductive Switching ensures more reliable (Note 10) and robust end application 60V 100A 5.5m V = 10V GS Low R minimizes power losses DS(ON) Low Q minimizes switching losses g Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description and Applications Qualified to AEC-Q101 Standards for High Reliability This MOSFET is designed to meet the stringent requirements of PPAP Capable (Note 4) automotive applications. It is qualified to AEC-Q101, supported by a Mechanical Data PPAP and is ideal for use in: Case: POWERDI 5060-8 High Frequency Switching Case Material: Molded Plastic, Green Molding Compound. UL Sync. Rectification Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 DCDC Converters Terminal Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.097 grams (Approximate) POWERDI 5060-8 S D Pin1 S D S D D G Top View Top View Bottom View Internal Schematic Pin Configuration Ordering Information (Note 5) Part Number Case Packaging DMTH6005LPSQ-13 POWERDI 5060-8 2,500 / Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMTH6005LPSQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 60 V DSS Gate-Source Voltage V 20 V GSS T = +25C 20.6 A Continuous Drain Current (Note 6) I A D 17.2 T = +70C A T = +25C C 100 Continuous Drain Current (Note 7) (Note 10) A I D T = +100C 90 C Maximum Continuous Body Diode Forward Current (Note 7) I 100 A S Pulsed Drain Current (10s pulse, duty cycle = 1%) I A DM 14.8 Avalanche Current, L=1mH I A AS 98 Avalanche Energy, L=1mH E mJ AS Thermal Characteristics Characteristic Symbol Value Units Total Power Dissipation (Note 6) 3.2 W T = +25C P A D Thermal Resistance, Junction to Ambient (Note 6) R 47 C/W JA Total Power Dissipation (Note 7) T = +25C P 150 W C D Thermal Resistance, Junction to Case (Note 7) R 1 C/W JC Operating and Storage Temperature Range T T -55 to +175 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage 60 - - V BV V = 0V, I = 1mA DSS GS D Zero Gate Voltage Drain Current - - 1 A I V = 48V, V = 0V DSS DS GS Gate-Source Leakage - - 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage 1 - 3 V V V = V , I = 250A GS(TH) DS GS D - 4.4 5.5 V = 10V, I = 50A GS D Static Drain-Source On-Resistance R - 5.7 7.2 m V = 6V, I = 20A DS(ON) GS D - 7.7 10 V = 4.5V, I = 12.5A GS D Diode Forward Voltage V - 0.9 - V V = 0V, I = 50A SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance - 2962 - Ciss V = 30V, V = 0V, DS GS 965.2 Output Capacitance - - pF C oss f = 1MHz Reverse Transfer Capacitance - 59.8 - C rss Gate Resistance - 0.66 - R V = 0V, V = 0V, f = 1MHz g DS GS - 47.1 - Total Gate Charge (V = 10V) Q GS g - 23.1 - Total Gate Charge (V = 4.5V) Q GS g nC V = 30V, I = 50A DD D 10.2 Gate-Source Charge Q - - gs Gate-Drain Charge Q - 12.5 - gd 8.3 Turn-On Delay Time t - - D(ON) Turn-On Rise Time t - 9.4 - R V = 30V, V = 10V, DD GS ns 22 Turn-Off Delay Time - - I = 30A, R = 3.3 tD(OFF) D G Turn-Off Fall Time - 8.9 - t F Body Diode Reverse Recovery Time ns t - 40.4 - RR I = 30A, di/dt = 100A/s F Body Diode Reverse Recovery Charge nC Q - 49.7 - RR Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 7. Thermal resistance from junction to soldering point (on the exposed drain pad). 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 10. Package limited. POWERDI is a registered trademark of Diodes Incorporated. 2 of 7 DMTH6005LPSQ November 2015 Diodes Incorporated www.diodes.com Document number: DS38359 Rev.1 - 2 ADVANCED INFORMATION