Green
DMTH6009LPS
60V +175C N-CHANNEL ENHANCEMENT MODE MOSFET
PowerDI
Product Summary Features
I
D Rated to +175C Ideal for High Ambient Temperature
BV R Max
DSS DS(ON) T = +25C
C
Environments
(Note 9)
100% Unclamped Inductive Switching Ensures More Reliable
10m @ V = 10V 89.5A
GS
60V and Robust End Application
81.7A
12m @ V = 4.5V
GS
Low R Minimizes Power Losses
DS(ON)
Low Q Minimizes Switching Losses
G
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. Green Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
Mechanical Data
This MOSFET is designed to minimize the on-state resistance
Case: PowerDI 5060-8
(R ), yet maintain superior switching performance, making it
DS(ON) Case Material: Molded Plastic, Green Molding Compound.
ideal for high efficiency power management applications.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
High Frequency Switching
Terminal Finish Matte Tin Annealed over Copper Leadframe.
Synchronous Rectification
Solderable per MIL-STD-202, Method 208
DC-DC Converters
Weight: 0.097 grams (Approximate)
PowerDI5060-8
S D
Pin1
S
D
S D
D
G
Top View Top View
Bottom View Internal Schematic
Pin Configuration
Ordering Information (Note 4)
Part Number Case Packaging
DMTH6009LPS-13 PowerDI5060-8 2,500/Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See
DMTH6009LPS
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage 60 V
VDSS
Gate-Source Voltage 16 V
V
GSS
T = +25C 11.76
A
Continuous Drain Current (Note 5) A
I
D
8.3
T = +100C
A
T = +25C
C
89.5
(Note 9)
Continuous Drain Current (Note 6) I A
D
T = +100C 63.3
C
Maximum Continuous Body Diode Forward Current (Note 6) 100 A
IS
Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 160 A
I
DM
Avalanche Current, L=0.1mH 20.3 A
I
AS
Avalanche Energy, L=0.1mH 20.6 mJ
E
AS
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation (Note 5) 2.8 W
T = +25C P
A D
Thermal Resistance, Junction to Ambient (Note 5) 53 C/W
R
JA
Total Power Dissipation (Note 6) 136 W
T = +25C P
C D
Thermal Resistance, Junction to Case (Note 6) 1.1 C/W
R
JC
Operating and Storage Temperature Range -55 to +175 C
T T
J, STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage 60 V
BV V = 0V, I = 1mA
DSS GS D
Zero Gate Voltage Drain Current 1 A
I V = 48V, V = 0V
DSS DS GS
Gate-Source Leakage 100 nA
I V = 16V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage 0.7 2 V
V V = V , I = 250A
GS(TH) DS GS D
7.2 10
V = 10V, I = 20A
GS D
Static Drain-Source On-Resistance R m
DS(ON)
8.9
12 V = 4.5V, I = 15A
GS D
Diode Forward Voltage V 0.9 V V = 0V, I = 20A
SD GS S
DYNAMIC CHARACTERISTICS (Note 8)
1,925
Input Capacitance C
ISS
V = 30V, V = 0V,
DS GS
438
Output Capacitance C pF
OSS
f = 1MHz
41
Reverse Transfer Capacitance C
RSS
1.7
Gate resistance
RG VDS = 0V, VGS = 0V, f = 1MHz
33.5
Total Gate Charge (V = 10V) Q
GS G
15.6
Total Gate Charge (V = 4.5V) Q
GS G
nC V = 30V, I = 13.5A
DS D
Gate-Source Charge 4.7
Q
GS
Gate-Drain Charge 5.3
Q
GD
4.5
Turn-On Delay Time t
D(ON)
8.6
Turn-On Rise Time t
R VDD = 30V, VGS = 10V,
ns
35.9
Turn-Off Delay Time t R = 6, I = 13.5A
D(OFF) G D
15.7
Turn-Off Fall Time t
F
18.2
Body Diode Reverse Recovery Time t ns
RR
I = 13.5A, di/dt = 400A/s
F
33.1
Body Diode Reverse Recovery Charge nC
QRR
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate.
6. Thermal resistance from junction to soldering point (on the exposed drain pad).
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
9. Package limited.
2 of 7
DMTH6009LPS April 2016
Diodes Incorporated
www.diodes.com
Document number: DS38368 Rev.2 - 2