DMTH6010LPSQ Green 60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features Rated to +175C Ideal for High Ambient Temperature I D BV R T = +25C Environments DSS DS(ON) C (Note 9) 100% Unclamped Inductive Switching Ensures More Reliable and Robust End Application 100A 8m V = 10V GS 60V Low R Minimizes On State Losses 85A DS(ON) 12m V = 4.5V GS Low Input Capacitance Fast Switching Speed Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description and Applications Qualified to AEC-Q101 Standards for High Reliability This MOSFET is designed to meet the stringent requirements of PPAP Capable (Note 4) Automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: Mechanical Data Case: PowerDI 5060-8 Engine Management Systems Case Material: Molded Plastic, Green Molding Compound. Body Control Electronics UL Flammability Classification Rating 94V-0 DC-DC Converters Moisture Sensitivity: Level 1 per J-STD-020 Terminal Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.097 grams (Approximate) PowerDI5060-8 S D Pin1 S D D S G D Top View Bottom View Top View Internal Schematic Pin Configuration Ordering Information (Note 5) Part Number Case Packaging DMTH6010LPSQ-13 PowerDI5060-8 2,500 / Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied. 2. See DMTH6010LPSQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 60 V DSS Gate-Source Voltage V 20 V GSS T = +25C 13.5 A Continuous Drain Current (Note 6) I A D 10.4 T = +70C A T = +25C C 100 Continuous Drain Current (Note 7) (Note 9) A I D T = +100C 75 C Maximum Continuous Body Diode Forward Current (Note 7) I 100 A S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 140 A DM Avalanche Current, L=0.1mH I 20 A AS Avalanche Energy, L=0.1mH E 20 mJ AS Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 6) T = +25C P 2.6 W A D Thermal Resistance, Junction to Ambient (Note 6) R 57 C/W JA Total Power Dissipation (Note 7) T = +25C P 136 W C D Thermal Resistance, Junction to Case (Note 7) R 1.1 C/W JC Operating and Storage Temperature Range T T -55 to +175 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV 60 V V = 0V, I = 1mA DSS GS D Zero Gate Voltage Drain Current I 1 A V = 48V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V 1 3 V V = V , I = 250A GS(TH) DS GS D 6.4 8 V = 10V, I = 20A GS D Static Drain-Source On-Resistance m R DS(ON) 8.3 12 V = 4.5V, I = 20A GS D Diode Forward Voltage 0.8 1.2 V V V = 0V, I = 20A SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance 2,090 C iss V = 30V, V = 0V, DS GS Output Capacitance 746 pF C oss f = 1MHz Reverse Transfer Capacitance 38.5 C rss Gate Resistance 0.2 0.59 1.5 R V = 0V, V = 0V, f = 1MHz g DS GS 19.3 Total Gate Charge (V = 4.5V) Q GS g 41.3 Total Gate Charge (V = 10V) Q GS g nC V = 30V, I = 20A DS D 6 Gate-Source Charge Q gs 8.8 Gate-Drain Charge Q gd 5.7 Turn-On Delay Time t D(ON) Turn-On Rise Time 4.3 t V = 30V, V = 10V, R DD GS ns Turn-Off Delay Time 23.4 I = 20A, R = 3 t D G D(OFF) Turn-Off Fall Time 9.7 t F Body Diode Reverse Recovery Time 35.4 ns t RR I = 20A, di/dt = 100A/s F Body Diode Reverse Recovery Charge 38.2 nC Q RR Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 7. Thermal resistance from junction to soldering point (on the exposed drain pad). 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2 of 7 DMTH6010LPSQ February 2018 Diodes Incorporated www.diodes.com Document number: DS38161 Rev. 2 - 2 ADVANCED INFORMATION