Green DMTH6010SK3Q 60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175C Ideal for High Ambient Temperature I max D BV R max DSS DS(ON) Environments T = +25C C Low R Ensures On State Losses Are Minimized DS(ON) 8m V = 10V 60V GS 70A Excellent Q R Product (FOM) gd x DS (ON) Advanced Technology for DC/DC Converters Small Form Factor Thermally Efficient Package Enables Higher Density End Products Description and Applications Lead-Free Finish RoHS Compliant (Notes 1 & 2) This MOSFET is designed to meet the stringent requirements of Halogen and Antimony Free. Green Device (Note 3) automotive applications. It is qualified to AEC-Q101, supported by a Qualified to AEC-Q101 Standards for High Reliability PPAP and is ideal for use in: PPAP Capable (Note 4) Power Management Functions Mechanical Data DC-DC Converters Backlighting Case: TO252 (DPAK) Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Finish - Matte Tin Annealed over Copper Leadframe Solderable per MIL-STD-202, Method 208 Weight: 0.33 grams (Approximate) Pin Out Top View Equivalent Circuit Top View Ordering Information (Note 5) Part Number Case Packaging DMTH6010SK3Q-13 TO252 (DPAK) 2,500/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMTH6010SK3Q Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 60 V DSS Gate-Source Voltage V 20 V GSS T = +25C 16.3 A Continuous Drain Current (Note 6) I A D 13.6 T = +70C A T = +25C 70 C Continuous Drain Current (Note 7) A I D 49 T = +100C C Maximum Continuous Body Diode Forward Current (Note 6) I 3 A S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I 80 A DM Avalanche Current, L=0.1mH I 20 A AS Avalanche Energy, L=0.1mH E 27.7 mJ AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 6) 3.1 W P D Thermal Resistance, Junction to Ambient (Note 6) R 47 C/W JA Total Power Dissipation (Note 7) P 59 W D Thermal Resistance, Junction to Case (Note 7) 2.5 C/W R JC Operating and Storage Temperature Range T T -55 to +175 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV 60 - - V V = 0V, I = 1mA DSS GS D Zero Gate Voltage Drain Current I - - 1 A V = 48V, V = 0V DSS DS GS Gate-Source Leakage - - 100 nA IGSS VGS = 20V, VDS = 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage 2 - 4 V VGS(TH) VDS = VGS, ID = 250A Static Drain-Source On-Resistance - 5.4 8 m R V = 10V, I = 20A DS(ON) GS D Diode Forward Voltage - 0.84 1.2 V V V = 0V, I = 20A SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance - 2841 - C iss V = 30V, V = 0V, DS GS Output Capacitance - 690 - pF C oss f = 1MHz Reverse Transfer Capacitance - 46 - C rss 0.55 Gate Resistance R - - V = 0V, V = 0V, f = 1MHz g DS GS 38.1 Total Gate Charge Q - - g 8.3 Gate-Source Charge Q - - nC V = 30V, I = 20A, V = 10V gs DS D GS 9.3 Gate-Drain Charge Q - - gd 8.6 Turn-On Delay Time - - tD(ON) 8.2 Turn-On Rise Time - - t V = 30V, V = 10V, R DD GS ns Turn-Off Delay Time - 17.4 - I = 20A, R = 3 t D G D(OFF) Turn-Off Fall Time - 5.7 - t F Body Diode Reverse Recovery Time - 33.8 - ns t RR I = 20A, di/dt = 100A/s F Body Diode Reverse Recovery Charge - 35.6 - nC Q RR Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Device mounted on infinite heat sink and measured by thermal couple attached on bottom heat sink of package. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2 of 7 DMTH6010SK3Q June 2016 Diodes Incorporated www.diodes.com Document number: DS38692 Rev. 1 - 2