DMTH6016LFDFW 60V +175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Rated to +175C Ideal for High Ambient Temperature I Max D BV R Max DSS DS(ON) Environments T = +25C A 100% Unclamped Inductive Switching Ensures More Reliable 18m V = 10V 9.4A GS and Robust End Application 60V 27.5m V = 4.5V 7.6A GS Low R Ensures On State Losses Are Minimized DS(ON) 0.6mm Profile Ideal for Low Profile Applications 2 PCB Footprint of 4mm Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description Qualified to AEC-Q101 Standards for High Reliability This new generation MOSFET is designed to minimize the on- state resistance (R ), yet maintain superior switching DS(ON) performance, making it ideal for high-efficiency power Mechanical Data management applications. Case: U-DFN2020-6 (SWP) (Type F) Case Material: Molded Plastic, Green Molding Compound. Power Management Functions UL Flammability Classification Rating 94V-0 DC-DC Converters Moisture Sensitivity: Level 1 per J-STD-020 Backlighting Terminals: Finish - Matte Tin Annealed over Copper Leadframe Solderable per MIL-STD-202, Method 208 Weight: 0.007 grams (Approximate) D U-DFN2020-6 (SWP) (Type F) e4e4 G S Pin Out Top View Bottom View Bottom View Internal Schematic Ordering Information (Note 4) Part Number Case Quantity Per Reel DMTH6016LFDFW-7 U-DFN2020-6 (SWP) (Type F) 3,000 DMTH6016LFDFW-13 U-DFN2020-6 (SWP) (Type F) 10,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DMTH6016LFDFW Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 60 V DSS Gate-Source Voltage V 20 V GSS T = +25C 9.4 A Continuous Drain Current (Note 6) V = 10V I A GS D 6.6 T = +100C A Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 70 A I DM Continuous Source-Drain Diode Current (Note 6) 3.0 A I S Pulsed Source-Drain Diode Current (10s Pulse, Duty Cycle = 1%) 70 A I SM Avalanche Current, L = 0.1mH (Note 7) I 15.3 A AS Avalanche Energy, L = 0.1mH (Note 7) E 11.7 mJ AS Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) T = +25C P 1.06 W A D Thermal Resistance, Junction to Ambient (Note 5) Steady State 141 C/W R JA Total Power Dissipation (Note 6) 2.3 W T = +25C P A D Thermal Resistance, Junction to Ambient (Note 6) Steady State 63 C/W R JA Thermal Resistance, Junction to Case (Note 6) 9.6 C/W T = +25C R C JC Operating and Storage Temperature Range -55 to +175 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV 60 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current I 1 A V = 48V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V 1 3 V V = V , I = 250A GS(TH) DS GS D 13.8 18 V = 10V, I = 10A GS D Static Drain-Source On-Resistance m R DS(ON) 20.3 27.5 V = 4.5V, I = 6A GS D Diode Forward Voltage 1.0 V V V = 0V, I = 10A SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance 925 C iss V = 30V, V = 0V, DS GS Output Capacitance 242 pF C oss f = 1MHz Reverse Transfer Capacitance 25.4 C rss Gate Resistance R 1.3 V = 0V, V = 0V, f = 1MHz g DS GS Total Gate Charge (V = 4.5V) Q 7.5 GS g Total Gate Charge (V = 10V) Q 15.3 GS g nC V = 30V, I = 10A DS D Gate-Source Charge Q 2.6 gs Gate-Drain Charge Q 3.5 gd Turn-On Delay Time t 3.2 D(ON) Turn-On Rise Time 4.2 t V = 10V, V = 30V, R GS DS ns Turn-Off Delay Time 14.5 R = 6, I = 10A t g D D(OFF) Turn-Off Fall Time 7.2 t F Reverse Recovery Time 20.8 ns t RR I = 10A, di/dt = 100A/s F Reverse Recovery Charge 11.4 nC Q RR Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. I and E ratings are based on low frequency and duty cycles to keep T = +25C. AS AS J 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2 of 7 February 2018 DMTH6016LFDFW www.diodes.com Diodes Incorporated Datasheet number: DS39885 Rev. 2 - 2 ADVANCED INFORMATION