DMTH6016LPD 60V 175C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Rated to +175C Ideal for High Ambient Temperature I Max D BV R Max DSS DS(ON) Environments T = +25C C 33.2A 19m V = 10V GS 100% Unclamped Inductive Switching (UIS) Test in Production 60V 28m V = 4.5V 28A GS Ensures More Reliable and Robust End Application High Conversion Efficiency Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability An Automotive-Compliant Part is Available Under Separate Data Sheet (DMTH6016LPDQ) Description and Applications Mechanical Data Case: PowerDI 5060-8 (Type C) This MOSFET is designed to minimize the on-state resistance Case Material: Molded Plastic,Gree Molding Compound. (R ), yet maintain superior switching performance, making it DS(ON) UL Flammability Classification Rating 94V-0 ideal for high-efficiency power management applications. Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin Annealed over Copper Leadframe. Engine Management Systems Solderable per MIL-STD-202, Method 208 Body Control Electronics Weight: 0.097 grams (Approximate) DCDC Converters D1 D2 S1 D1 G1 D1 S2 D2 G1 G2 G2 D2 S1 S2 Pin1 Pin Out Top View Bottom View Top View Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging DMTH6016LPD-13 2,500/Tape & Reel PowerDI5060-8 (Type C) Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DMTH6016LPD Maximum Ratings ( TA = +25C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage V 60 V DSS Gate-Source Voltage 20 V V GSS T = +25C 33.2 C Continuous Drain Current (Note 6) I A D 23.7 T = +100C C T = +25C 9.2 A Continuous Drain Current (Note 5) A I D 6.5 T = +100C A Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 50 A I DM Maximum Continuous Body Diode Forward Current (Note 6) 31 A I S Avalanche Current, L = 0.1mH 15.3 A I AS Avalanche Energy, L = 0.1mH 11.7 mJ E AS Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 2.5 W T = +25C P A D Thermal Resistance, Junction to Ambient (Note 5) 58 C/W R JA Total Power Dissipation (Note 6) 37.5 W T = +25C P C D Thermal Resistance, Junction to Case (Note 6) 4 C/W R JC Operating and Storage Temperature Range -55 to +175 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 60 V BV V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current 1 A I V = 48V, V = 0V DSS DS GS Gate-Source Leakage 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage 1 2.5 V V V = V , I = 250A GS(TH) DS GS D 14.5 19 V = 10V, I = 10A GS D Static Drain-Source On-Resistance m R DS(ON) 20.9 28 V = 4.5V, I = 6A GS D Diode Forward Voltage V 0.7 1.2 V V = 0V, I = 20A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C 864 pF iss V = 30V, V = 0V, DS GS Output Capacitance C 282 pF oss f = 1MHz Reverse Transfer Capacitance pF Crss 27 Gate Resistance Rg 1.3 V = 0V, V = 0V, f = 1MHz DS GS nC Total Gate Charge (V = 4.5V) Q 8.4 GS g nC Total Gate Charge (V = 10V) Q 17 GS g V = 30V, I = 10A DS D Gate-Source Charge nC Q 3.1 gs Gate-Drain Charge nC Q 4.3 gd Turn-On Delay Time t 3.4 ns D(ON) Turn-On Rise Time t 5.2 ns R V = 30V, V = 10V, DD GS Turn-Off Delay Time t 13 ns I = 10A, R = 6 D(OFF) D g Turn-Off Fall Time t 7 ns F Body Diode Reverse Recovery Time t 22 ns RR I = 10A, di/dt = 100A/s F Body Diode Reverse Recovery Charge nC Q 11 RR Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 6. Thermal resistance from junction to soldering point (on the exposed drain pad). 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 7 DMTH6016LPD March 2018 Diodes Incorporated www.diodes.com Document number: DS39224 Rev. 3 - 2