Green
DMTH6016LPS
60V 175C N-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI
Product Summary Features
Rated to +175C Ideal for High Ambient Temperature
I
D
BV R
DSS DS(ON)
T = +25C Environments
C
37.1A 100% Unclamped Inductive Switching Ensures More Reliable
16m @ VGS = 10V
60V
30.3A and Robust End Application
24m @ V = 4.5V
GS
High Conversion Efficiency
Low R Minimizes On-State Losses
DS(ON)
Description
Low Input Capacitance
Fast Switching Speed
This MOSFET is designed to minimize the on-state resistance (R )
DS(ON)
Thermally Efficient Package - Cooler Running Applications
and maintain superior switching performance, making it ideal for high
<1.1mm Package Profile Ideal for Thin Applications
efficiency power management applications.
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. Green Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Applications
An Automotive-Compliant Part is Available Under Separate
Power Management
Datasheet (DMTH6016LPSQ)
DC-DC Converters
Motor Control
Mechanical Data
Case: PowerDI5060-8
Case Material: Molded Plastic, Green Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Finish - Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.097 grams (Approximate)
PowerDI5060-8
D
S
D
Pin1
S D
D
S
G
G D
Top View
S
Top View Pin Configuration
Internal Schematic
Bottom View
Ordering Information (Note 4)
Part Number Case Packaging
DMTH6016LPS-13 PowerDI5060-8 2,500 / Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See
DMTH6016LPS
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit
Drain-Source Voltage 60 V
V
DSS
Gate-Source Voltage 20 V
V
GSS
T = +25C 37.1
C
Continuous Drain Current (Note 6) V = 10V I A
GS D
26.2
T = +100C
C
T = +25C 10.6
A
A
Continuous Drain Current (Note 5) V = 10V I
GS D
7.5
T = +100C
A
Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 75 A
I
DM
31
Maximum Continuous Body Diode Forward Current (Note 6) I A
S
15.3
Avalanche Current, L = 0.1mH I A
AS
11.7
Avalanche Energy, L = 0.1mH E mJ
AS
Thermal Characteristics
Characteristic Symbol Value Unit
Total Power Dissipation (Note 5) 3 W
T = +25C P
A D
Thermal Resistance, Junction to Ambient (Note 5) 49 C/W
R
JA
Total Power Dissipation (Note 6) 37.5 W
T = +25C P
C D
Thermal Resistance, Junction to Case (Note 6) 4 C/W
R
JC
Operating and Storage Temperature Range T T -55 to +175 C
J, STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage BV 60 V V = 0V, I = 250A
DSS GS D
Zero Gate Voltage Drain Current 1 A
I V =48V, V = 0V
DSS DS GS
Gate-Source Leakage 100 nA
I V = 20V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage 1 2.5 V
V V = V , I = 250A
GS(TH) DS GS D
16
V = 10V, I = 20A
GS D
Static Drain-Source On-Resistance R m
DS(ON)
24
V = 4.5V, I = 18A
GS D
Diode Forward Voltage V 0.7 1.2 V V = 0V, I = 1A
SD GS S
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance C 864
iss
VDS = 30V, VGS = 0V,
Output Capacitance C 282 pF
oss
f = 1MHz
Reverse Transfer Capacitance C 27
rss
Gate Resistance R 1.3 V = 0V, V = 0V, f = 1MHz
G DS GS
Total Gate Charge (V = 4.5V) Q 8.4
GS g
17
Total Gate Charge (V = 10V) Q
GS g
nC V = 30V, I = 10A
DS D
Gate-Source Charge 3.1
Q
gs
Gate-Drain Charge 4.3
Q
gd
Turn-On Delay Time 3.4
t
D(ON)
Turn-On Rise Time t 5.2 V = 10V, V = 30V,
R GS DS
ns
Turn-Off Delay Time t 13 R = 6, I = 10A
D(OFF) G D
Turn-Off Fall Time t 7
F
Reverse Recovery Time t 22 ns
RR
I = 10A, di/dt = 100A/s
F
Reverse Recovery Charge Q 11 nC
RR
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate.
6. Thermal resistance from junction to soldering point (on the exposed drain pad).
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
2 of 7
DMTH6016LPS April 2016
Diodes Incorporated
www.diodes.com
Document number: DS38436 Rev. 1 - 2
ADVANCED INFORMATION