DMTH6016LSDQ 60V 175C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Rated to +175C Ideal for High Ambient Temperature I Max D BV R Max DSS DS(ON) Environments T = +25C A 7.6A 19.5m V = 10V 100% Unclamped Inductive Switching Ensures More Reliable GS 60V 28m V = 4.5V 6.2A GS and Robust End Application Low R Minimizes On-State Losses DS(ON) Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Mechanical Data Description and Applications Case: SO-8 This MOSFET is designed to meet the stringent requirements of Case Material: Molded Plastic,Gree Molding Compound. Automotive applications. It is qualified to AEC-Q101, supported by a UL Flammability Classification Rating 94V-0 PPAP and is ideal for use in: Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin Annealed over Copper Leadframe. Power Management Solderable per MIL-STD-202, Method 208 DC-DC Converters Weight: 0.076 grams (Approximate) Motor Control SO-8 D1 S 1 D1 D2 Pin1 D1 G1 S2 D2 G1 G2 D2 G2 S1 S2 Pin-Out Equivalent Circuit Top View Top View Ordering Information (Note 5) Part Number Case Packaging DMTH6016LSDQ-13 SO-8 2,500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMTH6016LSDQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 60 V DSS Gate-Source Voltage V 20 V GSS T = +25C 7.6 A Continuous Drain Current (Note 7) V = 10V I A GS D 5.4 T = +100C A T = +25C 6.2 A A Continuous Drain Current (Note 7) V = 4.5V I GS D 4.4 T = +100C A 40 Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) I A DM 1.7 Maximum Continuous Body Diode Forward Current (Note 7) I A S 40 Pulsed Body Diode Forward Current (10s Pulse, Duty Cycle = 1%) I A SM 15.3 Avalanche Current, L = 0.1mH I A AS 11.7 Avalanche Energy, L = 0.1mH mJ EAS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 6) 1.4 W PD Thermal Resistance, Junction to Ambient (Note 6) 102 C/W R JA Total Power Dissipation (Note 7) 1.9 W P D Thermal Resistance, Junction to Ambient (Note 7) 78 C/W R JA Thermal Resistance, Junction to Case 14.5 C/W R JC Operating and Storage Temperature Range -55 to +175 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage 60 V BV V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current 1 A I V = 48V, V = 0V DSS DS GS Gate-Source Leakage 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V 1 2.5 V V = V , I = 250A GS(TH) DS GS D 15 19.5 V = 10V, I = 10A GS D Static Drain-Source On-Resistance m R DS(ON) 21 28 V = 4.5V, I = 6A GS D Diode Forward Voltage V 0.7 1.2 V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance C 864 iss V = 30V, V = 0V, DS GS Output Capacitance 282 pF Coss f = 1MHz Reverse Transfer Capacitance 27 C rss Gate Resistance 1.3 R V = 0V, V = 0V, f = 1MHz g DS GS 8.4 Total Gate Charge (V = 4.5V) Q GS g 17 Total Gate Charge (V = 10V) Q GS g nC V = 30V, I = 10A DS D Gate-Source Charge Q 3.1 gs Gate-Drain Charge Q 4.3 gd Turn-On Delay Time t 3.4 D(ON) Turn-On Rise Time t 5.2 R V = 10V, V = 30V, GS DS ns Turn-Off Delay Time t 13 R = 6, I = 10A D(OFF) g D Turn-Off Fall Time 7 tF Reverse Recovery Time 22 ns t RR I = 10A, di/dt = 100A/s F Reverse Recovery Charge 11 nC Q RR Notes: 6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2 of 7 DMTH6016LSDQ January 2017 Diodes Incorporated www.diodes.com Document number: DS38575 Rev. 2 - 2