DMTH61M8LPS 60V +175C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features Rated to +175C Ideal for High Ambient Temperature I Max D BV R Max DSS DS(ON) Environments T = +25C C 100% Unclamped Inductive Switching (UIS) Test in Production 1.6m V = 10V 225A GS Ensures More Reliable and Robust End Application 60V 180A High Conversion Efficiency 2.8m V = 4.5V GS Low R Minimizes On State Losses DS(ON) Low Input Capacitance Fast Switching Speed Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen- and Antimony-Free. Green Device (Note 3) For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. DMTH61M8LPS Maximum Ratings ( T = +25C, unless otherwise specified.) C Characteristic Symbol Value Unit Drain-Source Voltage V 60 V DSS Gate-Source Voltage V 20 V GSS 225 T = +25C C A Continuous Drain Current, V = 10V (Note 6) I GS D 160 T = +100C C Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 900 A I DM Maximum Continuous Body Diode Forward Current (Note 6) 225 A T = +25C I C S Pulsed Body Diode Forward Current (10s Pulse, Duty Cycle = 1%) 900 A I SM Avalanche Current, L = 1mH 34.8 A I AS Avalanche Energy, L = 1mH 605 mJ E AS Thermal Characteristics ( T = +25C, unless otherwise specified.) C Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 3.2 W T = +25C P A D Thermal Resistance, Junction to Ambient (Note 5) R 46 C/W JA Total Power Dissipation (Note 6) 187.5 W T = +25C P C D Thermal Resistance, Junction to Case (Note 6) R 0.8 C/W JC Operating and Storage Temperature Range -55 to +175 C TJ, TSTG Electrical Characteristics ( T = +25C, unless otherwise specified.) C Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 60 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current I 1 A V = 48V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 1 3 V V = V , I = 250A GS(TH) DS GS D 1.2 1.6 V = 10V, I = 30A GS D Static Drain-Source On-Resistance m R DS(ON) 1.9 2.8 V = 4.5V, I = 20A GS D Diode Forward Voltage 0.7 1.2 V V V = 0V, I = 20A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 8320 C iss V = 30V, V = 0V, DS GS Output Capacitance 2298 pF C oss f = 1MHz Reverse Transfer Capacitance 157 C rss Gate Resistance R 3 V = 0V, V = 0V, f = 1MHz g DS GS Total Gate Charge (V = 4.5V) Q 53.3 GS g Total Gate Charge (V = 10V) Q 115.5 GS g nC V = 30V, I = 30A DS D Gate-Source Charge Q 27.8 gs Gate-Drain Charge Q 16.5 gd Turn-On Delay Time t 10.3 D(ON) Turn-On Rise Time 23.9 t V = 30V, V = 10V, R DD GS ns Turn-Off Delay Time 108.3 I = 30A, R = 3 t D g D(OFF) Turn-Off Fall Time 51.7 t F Body Diode Reverse Recovery Time ns t 64 RR I = 30A, di/dt = 100A/s F Body Diode Reverse Recovery Charge nC Q 124 RR Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 6. Thermal resistance from junction to soldering point (on the exposed drain pad). 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 7 February 2021 DMTH61M8LPS Diodes Incorporated www.diodes.com Document number: DS41664 Rev. 5 - 2