Green DMTH8012LK3 80V 175C N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features I max Rated to +175C ideal for high ambient temperature D BV R max DSS DS(ON) T = +25C environments C Low R ensures on state losses are minimized DS(ON) 16m V = 10V 50A GS High Conversion Efficiency 80V Low Input Capacitance 21m V = 4.5V GS 43A Fast Switching Speed Lead-Free Finish RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description and Applications Qualified to AEC-Q101 Standards for High Reliability This MOSFET has been designed to minimize the on-state resistance (R ) and yet maintain superior switching performance, making it DS(ON) Mechanical Data ideal for high efficiency power management applications. Case: TO252 Synchronous Rectifier Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Backlighting Moisture Sensitivity: Level 1 per J-STD-020 Power Management Functions Terminal Finish - Matte Tin Annealed over Copper Leadframe DC-DC Converters Solderable per MIL-STD-202, Method 208 Weight: 0.33 grams (Approximate) TO252 Equivalent Circuit Top View Pin Out Top View Ordering Information (Note 4) Part Number Case Packaging DMTH8012LK3-13 TO252 2,500/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMTH8012LK3 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 80 V DSS Gate-Source Voltage V 20 V GSS T = +25C 50 C Continuous Drain Current (Note 6) V = 10V I A GS D 35 T = +100C C Maximum Continuous Body Diode Forward Current (Note 5) 3 A I S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 80 A I DM Avalanche Energy, L = 60mH E 147 mJ AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Total Power Dissipation (Note 5) P 2.6 W D Thermal Resistance, Junction to Ambient (Note 5) R 47 C/W JA Total Power Dissipation (Note 6) P 60 W D Thermal Resistance, Junction to Case (Note 6) R 2.5 C/W JC Operating and Storage Temperature Range T T -55 to +175 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 80 - - V V = 0V, I = 1mA DSS GS D Zero Gate Voltage Drain Current - - 1 A IDSS VDS = 64V, VGS = 0V Gate-Source Leakage - - 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage 1 1.3 3 V V V = V , I = 250A GS(TH) DS GS D - 12.1 16 V = 10V, I = 12A GS D Static Drain-Source On-Resistance R m DS(ON) - 14.8 21 V = 4.5V, I = 6A GS D Diode Forward Voltage V - 0.9 1.2 V V = 0V, I = 25A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C - 1949 - iss V = 40V, V = 0V, DS GS Output Capacitance C - 177 - pF oss f = 1MHz Reverse Transfer Capacitance C - 10 - rss Gate Resistance R - 0.7 - V = 0V, V = 0V, f = 1MHz g DS GS Total Gate Charge (V = 4.5V) Q - 15 - GS g Total Gate Charge (V = 10V) Q - 34 - GS g nC V = 40V, I = 12A DS D Gate-Source Charge Q - 6 - gs Gate-Drain Charge Q - 4.5 - gd Turn-On Delay Time t - 4.9 - D(ON) Turn-On Rise Time t - 3.8 - R V = 40V, V = 10V, DD GS ns I = 12A, R = 1.6 Turn-Off Delay Time t - 16.5 - D G D(OFF) Turn-Off Fall Time - - t 3.5 F Body Diode Reverse Recovery Time t - 30.2 - ns RR I = 12A, di/dt = 100A/s F Body Diode Reverse Recovery Charge - 34.6 - nC Q rr Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 6. Device mounted on infinite heat sink and measured by thermal couple attached on bottom heat sink of package. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 7 DMTH8012LK3 July 2015 Diodes Incorporated www.diodes.com Document number: DS37588 Rev. 3 - 2 NEW PRODUCT