DN0150ADJ / DN0150BDJ
DUAL NPN SURFACE MOUNT TRANSISTOR
Features Mechanical Data
Epitaxial Planar Die Construction Case: SOT-963
Ideally Suited for Automated Assembly Processes Case Material: Molded Plastic, Green Molding Compound. UL
Flammability Classification Rating 94V-0
Lead Free By Design/RoHS Compliant (Note 1)
Moisture Sensitivity: Level 1 per J-STD-020D
Gree Device (Note 2)
Terminals: Finish Matte Tin annealed over Copper leadframe.
Ultra Small Package
Solderable per MIL-STD-202, Method 208
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.0027 grams (approximate)
SOT-963
6 5 4
Q2
Q1
1 2 3
Top View Device Schematic
Maximum Ratings @T = 25C unless otherwise specified
A
Characteristic Symbol Value Unit
V 60 V
Collector-Base Voltage CBO
50 V
Collector-Emitter Voltage V
CEO
V 5 V
Emitter-Base Voltage EBO
Collector Current Continuous 100 mA
I
C
Base Current 30 mA
I
B
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3) 300 mW
P
D
Thermal Resistance, Junction to Ambient (Note 3) 417 C/W
R
JA
Operating and Storage Temperature Range T , T -55 to +150 C
J STG
Electrical Characteristics @T = 25C unless otherwise specified
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage 60 V
V( I = 10 A, I = 0
BR)CBO C E
Collector-Emitter Breakdown Voltage 50 V
V( I = 1mA, I = 0
BR)CEO C B
Emitter-Base Breakdown Voltage V( 5 V I = 10 A, I = 0
BR)EBO E C
Collector Cut-Off Current I 0.1 A V = 60V, I = 0
CBO CB E
Emitter Cut-Off Current I 0.1 A V = 5V, I = 0
EBO EB C
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage 0.10 0.25 V
V I = 100mA, I = 10mA
CE(SAT) C B
120 240
DC Current Gain DN0150ADJ
h V = 6V, I = 2mA
FE CE C
DN0150BDJ 200 400
SMALL SIGNAL CHARACTERISTICS
V = 10V, I = -1mA
CE E
Transition Frequency f 60 MHz
T
f = 30MHz
V = 10V, I = 0,
CB E
Output Capactiance C 1.3 pF
ob
f = 1MHz
Notes: 1. No purposefully added lead.
2. Diodes Inc.'sGree policy can be found on our website at
DN0150ADJ / DN0150BDJ
300
1,000
250
Pw = 10ms
200
100
150
Pw = 100ms
DC
10
100
R = 417C/W
50
JA
1
0
0.1 1 10 100
0 25 50 75 100 125 150
-V , COLLECTOR-EMITTER VOLTAGE (V)
CE
T , AMBIENT TEMPERATURE (C)
A
Fig. 2 Typical Collector Current
Fig. 1 Power Dissipation vs. Ambient Temperature (Note 3)
vs. Collector-Emitter Voltage (Note 3)
1,000 1
V = 6V
CE
T = 150C
A
I/I = 10
CB
T = 85C
A
T = 25C
A
T = -55C
A
T = 150C
A
0.1
100
T = 85C
A
T = 25C
A
T = -55C
A
10 0.01
0.1 1 10 100 1,000 0.0001 0.001 0.01 0.1 1
I , COLLECTOR CURRENT (mA) I , COLLECTOR CURRENT (A)
C
C
Fig. 3 Typical DC Current Gain
Fig. 4 Typical Collector-Emitter Saturation Voltage
vs. Collector Current (DN0150BDJ)
vs. Collector Current
1.2
1.2
V = 6V
CE
I =/I 10
CB
1.0
1.0
0.8
T = -55C
A 0.8
T = -55C
A
0.6
T = 25C
A
0.6
T = 25C
A
0.4
T = 85C
A
T = 85C
A
0.4
T = 150C
A
0.2
T = 150C
A
0
0.2
0.0001 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1
I , COLLECTOR CURRENT (A) I , COLLECTOR CURRENT (A)
C
C
Fig. 5 Typical Base-Emitter Turn-On Voltage
Fig. 6 Typical Base-Emitter Saturation Voltage
vs. Collector Current
vs. Collector Current
2 of 4 April 2009
DN0150ADJ / DN0150BDJ
Diodes Incorporated
www.diodes.com
Document number: DS31484 Rev. 3 - 2
NEW PRODUCT
P , POWER DISSIPATION (W)
h, DC CURRENT GAIN
D
FE
V , BASE-EMITTER TURN-ON VOLTAGE (V)
BE(ON)
V, COLLECTOR-EMITTER
-I , COLLECTOR CURRENT (mA)
CE(SAT)
C
V , BASE-EMITTER SATURATION VOLTAGE (V)
BE(SAT)
SATURATION VOLTAGE (V)