XX XX XX DN0150ALP4 / DN0150BLP4 50V NPN SMALL SIGNAL TRANSISTOR IN DFN1006 Features Mechanical Data Case: X2-DFN1006-3 BV > 50V CEO Case Material: Molded Plastic,Gree Molding Compound. I = 100mA High Collector Current C UL Flammability Classification Rating 94V-0 P = 1000mW Power Dissipation D Moisture Sensitivity: Level 1 per J-STD-020 2 0.60mm Package Footprint, 13 times Smaller than SOT23 Terminals: Finish NiPdAu. 0.4mm Height Package Minimizing Off-Board Profile e4 Solderable per MIL-STD-202, Method 208 Complementary PNP Type: DP0150ALP4/DP0150BLP4 Weight: 0.0008 grams (Approximate) Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability X2-DFN1006-3 B C E Top View Bottom View Pin Configuration Device Symbol e4e4e4 Ordering Information (Note 4) Product Marking Reel size (inches) Tape width (mm) Quantity per reel DN0150ALP4-7 T3 7 8 3,000 DN0150ALP4-7B T3 7 8 10,000 DN0150BLP4-7 T4 7 8 3,000 DN0150BLP4-7B T4 7 8 10,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DN0150ALP4 / DN0150BLP4 Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit V 60 V Collector-Base Voltage CBO V 50 V Collector-Emitter Voltage CEO V 5 V Emitter-Base Voltage EBO Collector Current Continuous 100 mA I C Peak Pulse Collector Current I 200 mA CM Base Current I 30 mA B Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit (Note 5) 400 Power Dissipation P mW D (Note 6) 1000 (Note 5) 310 Thermal Resistance, Junction to Ambient R C/W JA (Note 6) 120 Thermal Resistance, Junction to Lead (Note 7) 120 C/W R JL Operating and Storage and Temperature Range T , T -55 to +150 C J STG ESD Ratings (Note 8) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Collector-Base Breakdown Voltage 60 V BV I = 10A, I = 0 CBO C E Collector-Emitter Breakdown Voltage (Note 8) 50 V BV I = 1mA, I = 0 CEO C B Emitter-Base Breakdown Voltage 5 V BV I = 10A, I = 0 EBO E C Collector Cut-Off Current 0.1 A I V = 60V, I = 0 CBO CB E Emitter Cut-Off Current I 0.1 A V = 5V, I = 0 EBO EB C ON CHARACTERISTICS (Note 9) Collector-Emitter Saturation Voltage 0.10 0.25 V V I = 100mA, I = 10mA CE(SAT) C B DC Current Gain DN0150ALP4 120 240 h V = 6V, I = 2mA FE CE C DN0150BLP4 200 400 SMALL SIGNAL CHARACTERISTICS V = 10V, I = -1mA CE E Transition Frequency 60 MHz f T f = 30MHz V = 10V, I = 0, CB E Output Capacitance 1.3 pF C ob f = 1MHz Notes: 5. For the device mounted on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR4 PCB device is measured under still air conditions whilst operating in steady state condition. The entire exposed collector pad is attached to the heatsink. 6. Same as Note 5, except the exposed collector pad is mounted on 25mm x 25mm 2oz copper. 7. Thermal resistance from junction to solder-point (on the exposed collector pad). 8. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 9. Measured under pulsed conditions. Pulse width 300s. Duty cycle 2%. 2 of 5 DN0150ALP4 / DN0150BLP4 May 2015 Diodes Incorporated www.diodes.com Document number: DS31492 Rev. 7 - 2 NEW PRODUCT