DN350T05 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SOT-23 Complementary PNP Type Available (DP350T05) Dim Min Max C Ideal for Medium Power Amplification and Switching A 0.37 0.51 Lead, Halogen and Antimony Free, RoHS B C B 1.20 1.40 CompliantGree Device (Notes 2, 3 and 4) C 2.30 2.50 TOP VIEW B E Qualified to AEC-Q101 Standards for High D 0.89 1.03 Reliability D E G E 0.45 0.60 H G 1.78 2.05 Mechanical Data H 2.80 3.00 K M J 0.013 0.10 Case: SOT-23 J K 0.903 1.10 Case Material: Molded Plastic. UL Flammability L Classification Rating 94V-0 L 0.45 0.61 Moisture Sensitivity: Level 1 per J-STD-020D M 0.085 0.180 Terminal Connections: See Diagram 0 8 Terminals: Finish Matte Tin Finish annealed over All Dimensions in mm Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: K3S, See Page 3 Ordering & Date Code Information: See Page 3 Weight: 0.008 grams (approximate) Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage V 350 V CBO Collector-Emitter Voltage V 350 V CEO Emitter-Base Voltage V 5.0 V EBO Continuous Collector Current 500 mA I C Power Dissipation (Note 1) 300 mW P D Thermal Resistance, Junction to Ambient (Note 1) 417 R C/W JA Operating and Storage Temperature Range -55 to +150 T , T C J STG Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Collector-Base Breakdown Voltage 350 V V I = 100A, I = 0 (BR)CBO C E Collector-Emitter Breakdown Voltage 350 V V I = 1.0mA, I = 0 (BR)CEO C B Emitter-Base Breakdown Voltage V 5.0 V I = 10A, I = 0 (BR)EBO E C Collector Cutoff Current I 50 nA V = 250V, I = 0 CBO CB E Collector Cutoff Current I 50 nA V = 5V, I = 0 EBO CE C ON CHARACTERISTICS (Note 5) I = 1.0mA, V = 10V C CE 20 I = 10mA, V = 10V 30 C CE DC Current Gain h 30 200 I = 30mA, V = 10V FE C CE 20 200 I = 50mA, V = 10V C CE 15 I = 100mA, V = 10V C CE I = 10mA, I = 1.0mA 0.30 C B 0.35 I = 20mA, I = 2.0mA C B Collector-Emitter Saturation Voltage V V CE(SAT) 0.50 I = 30mA, I = 3.0mA C B 1.0 I = 50mA, I = 5.0mA C B I = 10mA, I = 1.0mA 0.75 C B Base-Emitter Saturation Voltage V 0.80 V I = 20mA, I = 2.0mA BE(SAT) C B 0.90 I = 30mA, I = 3.0mA C B Base-Emitter On Voltage V 2.0 V I = 100mA, V = 10V BE(ON) C CE SMALL SIGNAL CHARACTERISTICS Output Capacitance 7.0 pF C V = 20V, f = 1.0MHz, I = 0 obo CB E Transition Frequency 50 MHz f V = 10V, I = 20mA T CE C Notes: 5. Short duration pulse test used to minimize self-heating effect. 400 300 350 250 300 200 250 200 150 150 100 100 50 50 0 0 0 175 200 25 50 75 100 125 150 110 100 T , AMBIENT TEMPERATURE (C) I , COLLECTOR CURRENT (mA) A C Fig. 1, Max Power Dissipation vs. Ambient Temperature Fig. 2, DC Current Gain vs. Collector Current DN350T05 DS30625 Rev. 8 - 2 2 of 4 Diodes Incorporated www.diodes.com P , POWER DISSIPATION (mW) D